Silicon Wafer Materials

Silicon wafers are a matter of precision work. Silicon wafers form the basis of the most complex electronic components — from thyristors for high-voltage applications, through low-ohm circuit elements in automotive engineering and telecommunications, to large-scale integrated microprocessors and memory modules for information processing. Our longstanding cooperation and relationships with silicon wafer suppliers, which have grown over the years, have provided us with an in-depth knowledge of our customers and their requirements. Wherever possible, we strive to surpass our customers' expectations through specially tailored products and services. This strong customer orientation is reflected in a high level of appreciation and in our sound relationships with business partners. Please view our partial inventory listing or complete our Request a Quote form for NOVA to supply your needs!

We offer silicon wafer products such as:

  1"-2" Wafers
3" Wafers
4" Wafers
5" Wafers
6" Wafers
8" Wafers 		  12" Wafers
Ingot
Float Zone (FZ) Wafers
SOI (Silicon-On-Insulator) Wafers
Epi Wafers
Solar Wafers



If you see an item that you would like us to give you a quote on, check the "Add Cart" boxes. When you have all the items selected that you would like a quote for, click on the Quote Cart button. Please browse through one of our silicon wafer product categories to view our partial inventory for immediate delivery.


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NOVA offers the best competitive pricing without sacrificing quality. No order is too big or too small for us to handle. Contact Us today.






1"-2" Wafer Listing

 Top of Page Quote Cart Print 1"-2" Listing
Add   Qty on       Resistivity Thickness  
Cart Item ID Hand Diameter Type Orientation Min. Max. Min. Max. Grade
SAP-14781 5 1" Sapphire 430±25 DSP
    wafer with No Flat
A02-17534 29 1" Germanium 300±25 DSP
    Wafer with 1 Std. Flat
8376 100 2" N <100> 1 10 254 305 Prime
    w/Primary Flat Only
8289 215 2" P <100> 1 10 254 306 Prime
    w/ Primary Flat only.
EI-18 50 2" P <100> .01 .02 609 661
    2" P <100> .01-.02 ohm-cm 609-661µm Thick SSP
8289-AS 13 2" P <100> 1 10 254 306 Prime
    w/ Primary Flat only , Backside 2D Barcode Laser Mark & 3500 A° Thermal Oxide
CA02-10016 38 2" N+ <100> 350±25 GaAs
    Wafer
CA03-12715 38 2" SI <100> 350±25 GaAs
    Wafer
WC11081 300 2" N/As <111>±.5° .001 .005 254 304 Prime
    SSP w/Primary Flat Only
7244-232 50 2" P/Bo <100> .001 .005 254 305
    2" P/Bo <100> .001-.005 ohm-cm 254-305µm Thick SSP w/Primary Flat Only
A02-17705 1 2" P/Ga <100> .005 .04 150 200 Ge
    Wafer with Primary Flat Only
SAP-14996 100 2" Sapphire 430±25 DSP
    Prime Epi Ready Wafer with Primary Flat Only
A02-17983 4 2" Germanium <110>±1°, LM/Barcode Centered on Backside
    2" Germanium C Plane <0001> 1000±25µm Thick SSP Wafer with Primary Flat Only <110>±1°, LM/Barcode Centered on Backside
HS4962210 700 2.5" N <100> .14 .25 Ingot
    Ground
 

3" Wafer Listing

 Top of Page Quote Cart Print 3" Listing
Add   Qty on       Resistivity Thickness  
Cart Item ID Hand Diameter Type Orientation Min. Max. Min. Max. Grade
7395 548 3" N <100> 1 10 356 406 Prime
    with Primary Flat Only & 3,000 Ang. ±5% Thermal Oxide
8445 75 3" N <111> 6 12 245 325 FZ
    6-12 ohm-cm 245-325µm Thick Test
EI-30 54 3" N <111> 1125 1875 341 371 FZ
    1125-1875 ohm-cm 341-371µm Thick SSP
BC3032 41 3" N <111> .05 .1 300 406 As-cut
    Coin-roll
BC88996 172 3" N <111>off3-4° >.01 356 406 Epi
    layer= 7.5-10 ohm-cm 20-25µm
HC40561 21 3" N <110> Any and Ge
    As-cut Edgerounded Wafer w/2 Flats
WC37192 2550 3" N <100> >20 381 483 Test
    with Semi Flats
WC37620 500 3" N <100> 1 10 356 406 Prime
    with Primary Flat Only & BS LM
BC4025-LM 250 3" N <100> 1 100 275 325 DSP
    Prime with 2/ Semi-Std. Flats & Backside LM
WC37620-NV 625 3" N <100> 1 10 356 406 Prime
    w/Primary Flat Only
BC17967 2600 3" P <111> .014 .02 Ingot
    Ground & Flatted per U.S. Stds.
WC27806 525 3" P <100> 1 10 356 406 Prime
    w/2 Semi-Std Flats
7244-1272 2300 3" P <111> <10 Ingot
    Ground, Flat & Mounted
BP02-13285 383 3" P <100> 1 10 400±10 Etched
    Edge-rounded Wafer w/2 Semi-Std. Flats
CP02-11208 100 3" P <100> .001 .005 356 406 Prime
    w/2 Semi-Std. Flats
CP17-10041 10200 3" P <100> 1 10 Ingot
    Ground w/0 Flats or 2 Flats per Semi-Stds.
BC39650 332 3" N/As <111>±.5° .001 .005 355 405 Prime
    SSP w/2 Semi-Std. Flats
7244-2718-923 15900 3" N/Sb <111> .005 .05 Ingot
    As-grown Ground & Flatted
CP15-10503 80 3" Intrinsic <100> >10,000 675 725 FZ
    >10,000 ohm-cm 675-725µm Thick Prime DSP w/Primary Flat Only, TTV <1µm & Backside LM
 

4" Wafer Listing

 Top of Page Quote Cart Print 4" Listing
Add   Qty on       Resistivity Thickness  
Cart Item ID Hand Diameter Type Orientation Min. Max. Min. Max. Grade
7329 200 4" N <100> 1 100 500 550 DSP
    Prime w/Primary Flat Only
CSS4 250 4" N <111> .001 .005 500 550 Test
    w/2 Semi-Std. Flats
7329-LM 500 4" N <100> 1 100 500 550 DSP
    Prime w/Primary Flat Only & Backside LM
BC98787 50 4" N <100> .01 .02 500 550 Prime
    w/2 Semi-Std. Flats
HC44002 15 4" N <111> 5 40 762 813 Ge
    As-cut Wafer
HC44003 46 4" N <111> 5 40 889 940 Ge
    As-cut Wafer
HC44004 12 4" N <Any> 5 40 1016 1067 Ge
    As-cut Coin-rolled Wafer
STK8414 950 4" N <100> 1 10 500 550 Prime
    w/2 Semi-Std. Flats
STK9671-1 525 4" N <100> 1 40 475 575 Test
    SSP w/Primary Flat only
7244-4682-126A 4000 4" N <111> 1 9 Ingot
    As-grown Phosphorus doped
CN02-16027 25 4" N <100> 1 30 700 750 Prime
    SSP w/Primary Flat Only, TTV </=3µm
DN01-11604 375 4" N <100> 1 20 390 410 DSP
    w/2 Semi-Std Flats
DN03-10624 283 4" N <100> .001 .005 500 550 Prime
    w/2 Semi-Std. Flats
7358 25 4" P <100> 10 20 500 550 Prime
    SSP w/2 Semi-Std. Flats
7375 400 4" P <100> 1 25 475 575 Test
    w/2 Semi-Std Flats
7871 175 4" P <100> 1 10 500 550 DSP
    w/Primary Flat Only, TTV <5µm, Bow <30µm
BC77213 175 4" P <100> .01 .02 500 550 Prime
    w/2 Flats
BC79114 375 4" P <100> 1 10 500 550 DSP
    w/2 Semi-Std. Flats
GC38892 14087 4" P <100> 1.3 3.7 Ingot
    Ground 1Flat per U.S. Semi-Stds.
HC49138 4400 4" P <111> .0015 .0035 Ingot
    Ground, flatted & mounted
HS19155 9 4" P <111>±0.5° .001 .005 325 375 DSP
    Prime w/Primary Flat Only, TTV <1µm
HS39626 1375 4" P <100> .001 .005 500 550 Prime
    w/Semi-Std Flats
DP07-095 222 4" P <111>±1° .024 .045 310 330 Prime
    ER & Lapped w/Primary Flat Only
SOI11000 7 4" P <100> 1 10 280 320 SOI
    CZ Handle DSP w/o oxide, Box: 1.4-2.1µm Thermal, Device 1-10 ohm-cm 35-40µm, TTV <10µm
GC38892-2 7140 4" P <100> 1.3 4.1 Ingot
    Ground 2 Flats per U.S. Semi-Stds.
STK8414-2 310 4" P <100> 1 10 500 550 Prime
    w/2 Semi-Std. Flats
STK8414-2-AS-1K 5 4" P <100> 1 10 500 550 Prime
    SSP w/2 Semi-Std. Flats & 1000 A°±5% Dry Thermal Oxide on Both Sides
STK8414-2-AS-250 5 4" P <100> 1 10 500 550 Prime
    SSP w/2 Semi-Std. Flats & 250 A°±15% Dry Thermal Oxide on Both Sides
STK8414-2-AS-500 5 4" P <100> 1 10 500 550 Prime
    SSP w/2 Semi-Std. Flats & 500 A°±5% Dry Thermal Oxide on Both Sides
HS39626-DO 50 4" P <100> .001 .005 500 550 Prime
    w/Semi-Std Flats & 2850 A°±5% Dry Thermal Oxide
HS39626-OX 75 4" P <100> .001 .005 500 550 Prime
    w/Semi-Std Flats & 2850 A°±5% Dry Chlorinated Thermal Oxide and Forming Gas Anneal
HS39626-WO 100 4" P <100> .001 .005 500 550 Prime
    w/2 Semi-Std Flats & 2850 A°±5% Wet Thermal Oxide
HS39626-DO9 75 4" P <100> .001 .005 500 550 Prime
    w/Semi-Std Flats & 900 A°±7% Dry Thermal Oxide
4A01-11732 346 4" x
    4" x 4" x 0.70mm Glass Borosilicate Wafer No Bevels, Surface Quality 80/50. (Schott D-263)
HC22001 15 4" N+ <Any> .0015 .003 Any Epi
    Layer N w/Any Resistivity & Thickness
7244-6014-859 7500 4" N+ <100> Any Ingot
    As-grown, Arsenic doped, Ground & Flatted
4I0-11370 200 4" Intrinsic <100> >10,000 500 550 FZ
    >10,000 ohm-cm 500-550µm Thick Prime DSP w/Primary Flat Only
 

5" Wafer Listing

 Top of Page Quote Cart Print 5" Listing
Add   Qty on       Resistivity Thickness  
Cart Item ID Hand Diameter Type Orientation Min. Max. Min. Max. Grade
6416M 4009 5" P <100> .087 .092 Ingot
    Ground, Flatted w/2 Flats, V-notch on Primary Flat
7244-6691-2B 4100 5" P <100> <.007 Ingot
    Ground w/2 Flats
7244-6013-427 2535 5" N+ <111> <=.007 Ingot
    Ground, Flatted & Mounted, Arsenic doped
7244-6013-633 20524 5" N+ <111> .001 .01 Ingot
    As-grown Arsenic doped with 3 Flats
AV381894 200 5" Any 625±25
    5" Any Type, Orientation, Resistivity 625±25µm Thick SSP with Primary Flat Only or 2 Std. Flats
 

6" Wafer Listing

 Top of Page Quote Cart Print 6" Listing
Add   Qty on       Resistivity Thickness  
Cart Item ID Hand Diameter Type Orientation Min. Max. Min. Max. Grade
FA01-9900 4 6" x.75mm Pyrex
    Transparent wafers with Edge Seam, Round No Flat
WC109484 1500 6" N <110> 1 10 Ingot
    Ground w/ U.S. Primary Flat Only
GC38892-5 161197 6" N <100> .025 .07396 Ingot
    Ground & 1 Flat per U.S. Semi-Stds., Antimony doped
HS39560-2 25 6" N <100> >1000 1143 1169 FZ
    >1000 ohm-cm 1143-1169µm Thick DSP w/Primary Flat Only
FN06-10733-AS 50 6" N <100> 4 7 600 650 Prime
    w/Primary Flat Only, LM, 10,000 A° WTO & 4,000 A° Stoichiometric LPCVD Nitride
FN06-10733 275 6" N <100> 1 10 600 700 Prime
    w/Primary Flat Only & LM
7447 6 6" P <100> 1 20 530 585 Test
    with Jeida Flat
7467 25 6" P <100> 1 50 600 700
    6" P <100> 1-50 ohm-cm 600-700µm Thick SSP w/Primary Flat Only & 3,000 A°±5% Thermal Oxide
BC2234 175 6" P <100> 1 100 600 700 Prime
    w/Primary Flat Only, LM Optional & 750 A°±10% Thermal Oxide
BC87992 500 6" P <100> 1 100 600 700 Test
    w/Primary Flat Only & 20,000 A° ± 5% Thermal Oxide
C2TC017 2225 6" P <100> 1 100 Test
    w/ Primary Flat Only.
GC19060 125 6" P <100> 10 30 650 700 Prime
    w/Primary Flat Only
HS18730 23 6" P <100> 20 30 600 655
    6" P <100> 20-30 ohm-cm 600-655µm Thick SSP w/Primary Flat Only
HS18909 150 6" P <100> 1 30 650 700 Prime
    w/Std. Notch
HS19222 5 6" P <100>off 1 30 700 750 Lapped
    w/Primary Flat Only
HS37809 100 6" P <100> 1 100 600 700
    6" P <100> 1-100 ohm-cm 600-700µm Thick SSP with 10,000 A°± 5% Thermal Oxide
HS77723 7 6" P <100> .005 .025 390 410 Prime
    with Primary Flat Only & LM
WC78987 875 6" P <100> 1 50 650 700 Prime
    w/ Primary Flat Only
FP02-61160 175 6" P <100> .001 .005 650 700 Prime
    SSP w/Primary Flat Only
3162085 6000 6" Any <Any> Any Ingot
    As-grown
STK9281 4 6" Any <Any> 0 100 Any Etched
    Coinrolled with Primary Flat Only.
WC99755 96 6" Any >600
    6" Any Type, Orientation, Resistivity >600µm Thick SSP Coinroll w/Primary Flat Only or Notch
FN06-052808 4 6" SOI <100> >10 ohm-cm 851±5µm Thick DSP; B >10 851±5 SOI
    with Etch Cavities, Handle: N/P <100> >10 ohm-cm 851±5µm Thick DSP; BOX: 10,000A°, Device: P/N <100> 1-10 ohm-cm, 305±5µm
FN06-052820 8 6" SOI <100> 10-30 ohm-cm 665±5µm Thick DS 10 30 665±5 SOI
    with etch cavities, Handle: P <100> 10-30 ohm-cm 665±5µm Thick DSP w/Primary Flat, Seq'l LM; Box:10,000 A°±5%, Device: N <100>1-10, 305±5µm
 

8" Wafer Listing

 Top of Page Quote Cart Print 8" Listing
Add   Qty on       Resistivity Thickness  
Cart Item ID Hand Diameter Type Orientation Min. Max. Min. Max. Grade
IO9433 75 8" N <100> 10 40 675 775
    8" N <100> 10-40 ohm-cm 675-775µm Thick SSP & 3,000 A° ±5% Thermal Oxide
GN16-12341 150 8" N <100> >5000 700 750 FZ
    >5000 ohm-cm 700-750µm Thick Prime SSP with Std. Notch
GN16-17277 400 8" N <100>±0.5° 8 10 700 750 FZ
    8-10 ohm-cm 700-750µm Thick Prime DSP with US Std. Notch & M12 Laser Mark
IN08-11685 25 8" N <100> 1 30 700 750 Prime
    SSP w/Std. Notch & 3,000 A° ± 10% Thermal Oxide
5196 575 8" P <100> .005 .01 700 750
    8" P <100> .005-.01 ohm-cm 700-750µm Thick SSP w/Notch & LM
ga08 225 8" P <100> .008 .02 700 750
    8" P <100> .008-.02 ohm-cm 700-750µm Thick SSP with EPI Layer
7574-2 1300 8" P <100> .01 .03 675 775
    8" P <100> .01-.03 ohm-cm 675-775µm Thick SSP w/Std. Notch & Poly Oxide Backseal.
BC9137 85 8" P <100> 10 20 705 745
    8" P <100> 10-20 ohm-cm 705-745µm Thick SSP w/Semi-Std. Notch, TTV <10µm, Backside LM
HS18288 602 8" P <100> 0 50 585 775 Test
    w/Notch & 10,000 A° ±5% Thermal Oxide
WC98987 2146 8" P <100> 1 50 700 750 Prime
    SSP w/Std. Notch & LM
3012007A 50 8" P <100> 10 25 700 750 SOI
    Wafer Box: 1900-4100 A°, SOI Layer 5-25 ohm-cm 2.6-3.2µm
BC118365 25 8" P <100> 1 100 700 750
    8" P <100> 1-100 ohm-cm, 700-750µm Thick SSP w/Std. Notch & LaserMark.
GCR11485 200 8" P <100> .5 100 700 750
    8" P <100> .5-100 ohm-cm 700-750µm Thick SSP with Notch, Optional LM & 10,000 A°±5% Thermal Oxide
JK-11811 19 8" P <100> 1 100 675 775
    8" P <100> 1-100 ohm-cm 675-775µm Thick SSP with Std. Notch only.
JK-11817 574 8" P <100> 1 100 675 775
    8" P <100> 1-100 ohm-cm 675-775µm Thick SSP with Std. Notch only & 3,000A° ±5% Thermal Oxide.
JK-82019 25 8" P <100> 4 6 700 750
    8" P <100> 4-6 ohm-cm 700-750µm Thick SSP w/Std. Notch & LaserMark
OCR71714 448 8" P <100> .5 100 700 750
    8" P <100> .5-100 ohm-cm 700-750µm Thick SSP with Notch, Optional LM & 2,000 A°±5% Thermal Oxide
STK950-2 1022 8" P <100> 1 100 675 775 Test
    w/Std. Notch
STK99500 23 8" P <100> 1 10 975 1025 DSP
    Prime w/Std. Notch
WC119234 400 8" P <100> Any 650 750 Reclaim
    w/Std. Notch & LPD's <30 @ .3µm
7574-2-OX 425 8" P <100> .01 .05 675 775
    8" P <100> .01-.05 ohm-cm 675-775µm Thick SSP w/Std. Notch & 3,000 A°±5% Thermal Oxide
STK9500-2 175 8" P <100> 1 100 700 750
    8" P <100> 1-100 ohm-cm 700-750µm Thick SSP w/Std. Notch
OP00-9833-AS 50 8" P <100> 1 100 700 750
    8" P <100> 1-100 ohm-cm 700-750µm Thick SSP w/Std. Notch & 500 A°±10% Dry Thermal Oxide
OP03-11146-OX 1274 8" P <100> 1 30 675 775
    8" P <100> 1-30 ohm-cm 675-775µm Thick SSP with Std. Notch & 3,000 A°±5% Thermal Oxide
GP11-13193 25 8" P <111>off4° 4.5 6.5 700 750 Prime
    with Notch & Poly Backseal
HP01-T200R 210 8" P <100> 0 100 >700 Etched
    Edge-rounded Coinroll w/Std. Notch
OP03-11146 3025 8" P <100> 1 50 725 750
    8" P <100> 1-50 ohm-cm 725-750µm Thick Etch/Etch with Std. Notch
WC10103~P1 325 8" P <100> 3 40 700 750 Prime
    SSP w/Std. Notch, optional Lasermark
EG9911 125 8" SOI <100> 0.3-1.2 ohm-cm 710-74 0.3 1.2 SOI
    Soitec Wafer H: N/Ph <100> 0.3-1.2 ohm-cm 710-740µm, Box: 1000nm, D: P/Bo <100> 14-22 ohm-cm Thickness 1500nm
GA06-13634 350 8" N/As <100> <.005 675 775
    8" N/As <100> <.005 ohm-cm 675-775µm Thick SSP with 3,000 A°±5% Thermal Oxide
9911 925 8" P/Bo <100> >10 725±25 DSP
    Prime w/ STD. Notch TTV <5µm, Oi <12 ppma, B&W <30µm
GC19195 1375 8" P/Bo <100> 0 100 675 775
    8" P/Bo <100> 0-100 ohm-cm 675-775µm Thick SSP with Std. Notch & Backside LM
GP26-12991 25 8" P/Bo <100> >1000 710 740 Prime
    SSP MCZ w/Semi-std Notch and Low Oxygen (<12ppma) & Low Carbon. FS by SEH.
HBF-11226 413 8" 1.10mm DSP
    Glass Wafer w/ Notch
8SBF-18235 4 8" Schott DSP
    (60/40) Wafer with Notch
 

12" Wafer Listing

 Top of Page Quote Cart Print 12" Listing
Add   Qty on       Resistivity Thickness  
Cart Item ID Hand Diameter Type Orientation Min. Max. Min. Max. Grade
STK9754 200 12" P <100> 1 100 750 800 DSP
    w/Std Notch & LM
 

Ingot Wafer Listing

 Top of Page Quote Cart Print Ingot Listing
Add   Qty on       Resistivity Thickness  
Cart Item ID Hand Diameter Type Orientation Min. Max. Min. Max. Grade
HS4962210 700 2.5" N <100> .14 .25 Ingot
    Ground
BC17967 2600 3" P <111> .014 .02 Ingot
    Ground & Flatted per U.S. Stds.
7244-1272 2300 3" P <111> <10 Ingot
    Ground, Flat & Mounted
CP17-10041 10200 3" P <100> 1 10 Ingot
    Ground w/0 Flats or 2 Flats per Semi-Stds.
7244-2718-923 15900 3" N/Sb <111> .005 .05 Ingot
    As-grown Ground & Flatted
7244-4682-126A 4000 4" N <111> 1 9 Ingot
    As-grown Phosphorus doped
GC38892 14087 4" P <100> 1.3 3.7 Ingot
    Ground 1Flat per U.S. Semi-Stds.
HC49138 4400 4" P <111> .0015 .0035 Ingot
    Ground, flatted & mounted
GC38892-2 7140 4" P <100> 1.3 4.1 Ingot
    Ground 2 Flats per U.S. Semi-Stds.
7244-6014-859 7500 4" N+ <100> Any Ingot
    As-grown, Arsenic doped, Ground & Flatted
6416M 4009 5" P <100> .087 .092 Ingot
    Ground, Flatted w/2 Flats, V-notch on Primary Flat
7244-6691-2B 4100 5" P <100> <.007 Ingot
    Ground w/2 Flats
7244-6013-427 2535 5" N+ <111> <=.007 Ingot
    Ground, Flatted & Mounted, Arsenic doped
7244-6013-633 20524 5" N+ <111> .001 .01 Ingot
    As-grown Arsenic doped with 3 Flats
WC109484 1500 6" N <110> 1 10 Ingot
    Ground w/ U.S. Primary Flat Only
GC38892-5 161197 6" N <100> .025 .07396 Ingot
    Ground & 1 Flat per U.S. Semi-Stds., Antimony doped
3162085 6000 6" Any <Any> Any Ingot
    As-grown
 

Float Zone Wafer Listing

 Top of Page Quote Cart Print Float Zone Listing
Add   Qty on       Resistivity Thickness  
Cart Item ID Hand Diameter Type Orientation Min. Max. Min. Max. Grade
8445 75 3" N <111> 6 12 245 325 FZ
    6-12 ohm-cm 245-325µm Thick Test
EI-30 54 3" N <111> 1125 1875 341 371 FZ
    1125-1875 ohm-cm 341-371µm Thick SSP
CP15-10503 80 3" Intrinsic <100> >10,000 675 725 FZ
    >10,000 ohm-cm 675-725µm Thick Prime DSP w/Primary Flat Only, TTV <1µm & Backside LM
4I0-11370 200 4" Intrinsic <100> >10,000 500 550 FZ
    >10,000 ohm-cm 500-550µm Thick Prime DSP w/Primary Flat Only
HS39560-2 25 6" N <100> >1000 1143 1169 FZ
    >1000 ohm-cm 1143-1169µm Thick DSP w/Primary Flat Only
GN16-12341 150 8" N <100> >5000 700 750 FZ
    >5000 ohm-cm 700-750µm Thick Prime SSP with Std. Notch
GN16-17277 400 8" N <100>±0.5° 8 10 700 750 FZ
    8-10 ohm-cm 700-750µm Thick Prime DSP with US Std. Notch & M12 Laser Mark
 

Epi Wafer Listing

 Top of Page Quote Cart Print Epi Listing
Add   Qty on       Resistivity Thickness  
Cart Item ID Hand Diameter Type Orientation Min. Max. Min. Max. Grade
BC88996 172 3" N <111>off3-4° >.01 356 406 Epi
    layer= 7.5-10 ohm-cm 20-25µm
HC22001 15 4" N+ <Any> .0015 .003 Any Epi
    Layer N w/Any Resistivity & Thickness
 
 

SOI (Silicon-On-Insulator) Wafer Listing

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SOI material is used widely in applications such as telecommunication products and optical devices, dielectrically isolated integrated circuits, solid state relays and micro-machined components for sensors and actuators.

NOVA offers an innovative and powerful through-wafer interconnect technology which can allow device designers in both standard IC and MEMS device industries overcome packaging problems associated with their designs. NOVA offers a fully customized engineered substrate solution to minimize your fabrication headaches.

Typical Diameters range from 4" to 300mm. Please complete our Request a Quote form with your specifications so NOVA can quote your needs!
 
 

Epitaxial Wafer Listing

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Epitaxial silicon wafers are made through the precipitation of a monocrystalline silicon coat. The substratum consists of a polished silicon wafer.

Epitaxial wafers are used for discrete applications and, because of their extraordinary quality as semiconductors, for the manufacturing of the most progressive and highly integrated semiconductor construction elements (ICs).

Typical Diameters range from 3" to 300mm. Please complete our Request a Quote form with your specifications so NOVA can quote your needs!
 
 

Solar Wafer Listing

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NOVA creates significant competitive advantages, in terms of cost and quality, which are passed through the value chain of the entire silicon-based solar cell manufacturing market. The resulting single crystal wafers are manufactured and sold to meet the growing demands of the photovoltaic industry's major solar cell and module manufacturers, helping to further satisfy rapidly expanding end-user demand currently growing by 35 percent per year. Because NOVA's sources are designed for very high volume materials handling, as opposed to traditional precision semiconductor manufacturing that has been used to service the photovoltaic industry's silicon wafer needs in the past, NOVA can allow far better utilization of raw silicon feedstock at significantly lower cost within the supply chain.

Typical Diameters range from 3" to 125mm psuedo square to 300mm. Please contact NOVA's specialist or complete our Request a Quote form with your specifications so NOVA can quote your needs!