1"-2" Wafer Listing
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SAP-14781
5
1"
Sapphire
430±25
DSP
wafer with No Flat
A02-17534
29
1"
Germanium
300±25
DSP
Wafer with 1 Std. Flat
8376
100
2"
N
<100>
1
10
254
305
Prime
w/Primary Flat Only
8289
215
2"
P
<100>
1
10
254
306
Prime
w/ Primary Flat only.
8289-AS
13
2"
P
<100>
1
10
254
306
Prime
w/ Primary Flat only , Backside 2D Barcode Laser Mark & 3500 A° Thermal Oxide
CA02-10016
38
2"
N+
<100>
350±25
GaAs
Wafer
CA03-12715
38
2"
SI
<100>
350±25
GaAs
Wafer
BC28629
1000
2"
Any
<Any>
Any
495
521
Lapped
ER
WC11081
300
2"
N/As
<111>±.5°
.001
.005
254
304
Prime
SSP w/Primary Flat Only
7244-232
50
2"
P/Bo
<100>
.001
.005
254
305
2" P/Bo <100> .001-.005 ohm-cm 254-305µm Thick SSP w/Primary Flat Only
A02-17705
1
2"
P/Ga
<100>
.005
.04
150
200
Ge
Wafer with Primary Flat Only
SAP-14996
100
2"
Sapphire
430±25
DSP
Prime Epi Ready Wafer with Primary Flat Only
SAP-16658
50
2"
Sapphire
430±20
Epi
Ready Wafer w/Primary Flat Only, TTV <10µm, Bow & Warp <=10µm, Ra =<0.3nm
A02-17983
4
2"
Germanium
<110>±1°, LM/Barcode Centered on Backside
2" Germanium C Plane <0001> 1000±25µm Thick SSP Wafer with Primary Flat Only <110>±1°, LM/Barcode Centered on Backside
HS4962210
700
2.5"
N
<100>
.14
.25
Ingot
Ground
3" Wafer Listing
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7395
548
3"
N
<100>
1
10
356
406
Prime
with Primary Flat Only & 3,000 Ang. ±5% Thermal Oxide
8445
75
3"
N
<111>
6
12
245
325
FZ
6-12 ohm-cm 245-325µm Thick Test
BC3032
41
3"
N
<111>
.05
.1
300
406
As-cut
Coin-roll
BC88996
172
3"
N
<111>off3-4°
>.01
356
406
Epi
layer= 7.5-10 ohm-cm 20-25µm
HC40561
21
3"
N
<110>
Any
and
Ge
As-cut Edgerounded Wafer w/2 Flats
WC37192
1925
3"
N
<100>
>20
381
483
Test
with Semi Flats
WC37620-NV
625
3"
N
<100>
1
10
356
406
Prime
w/Primary Flat Only
BC17967
2600
3"
P
<111>
.014
.02
Ingot
Ground & Flatted per U.S. Stds.
WC27806
150
3"
P
<100>
1
10
356
406
Prime
w/2 Semi-Std Flats
7244-1272
2300
3"
P
<111>
<10
Ingot
Ground, Flat & Mounted
BP02-13285
383
3"
P
<100>
1
10
400±10
Etched
Edge-rounded Wafer w/2 Semi-Std. Flats
CP02-11208
100
3"
P
<100>
.001
.005
356
406
Prime
w/2 Semi-Std. Flats
CP17-10041
10200
3"
P
<100>
1
10
Ingot
Ground w/0 Flats or 2 Flats per Semi-Stds.
WC27806-AS
25
3"
P
<100>
1
10
356
406
Prime
w/2 Semi-Std Flats & 6,000 A°±5% Thermal Oxide
BC39650
432
3"
N/As
<111>±.5°
.001
.005
355
405
Prime
SSP w/2 Semi-Std. Flats
7244-2718-923
15900
3"
N/Sb
<111>
.005
.05
Ingot
As-grown Ground & Flatted
CP15-10503
55
3"
Intrinsic
<100>
>10,000
675
725
FZ
>10,000 ohm-cm 675-725µm Thick Prime DSP w/Primary Flat Only, TTV <1µm & Backside LM
4" Wafer Listing
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Print 4" Listing
Qty on
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7329
200
4"
N
<100>
1
100
500
550
DSP
Prime w/Primary Flat Only
BC98787
50
4"
N
<100>
.01
.02
500
550
Prime
w/2 Semi-Std. Flats
HC44002
15
4"
N
<111>
5
40
762
813
Ge
As-cut Wafer
HC44003
46
4"
N
<111>
5
40
889
940
Ge
As-cut Wafer
HC44004
12
4"
N
<Any>
5
40
1016
1067
Ge
As-cut Coin-rolled Wafer
STK8414
950
4"
N
<100>
1
10
500
550
Prime
w/2 Semi-Std. Flats
STK9671-1
425
4"
N
<100>
1
40
475
575
Test
SSP w/Primary Flat only
7244-4682-126A
4000
4"
N
<111>
1
9
Ingot
As-grown Phosphorus doped
CN02-16027
25
4"
N
<100>
1
30
700
750
Prime
SSP w/Primary Flat Only, TTV </=3µm
DN01-11604
375
4"
N
<100>
1
20
390
410
DSP
w/2 Semi-Std Flats
DN03-10624
408
4"
N
<100>
.001
.005
500
550
Prime
w/2 Semi-Std. Flats
STK8414-OX
20
4"
N
<100>
1
10
500
550
Prime
w/2 Semi-Std. Flats & 5000 A°±5% Wet Thermal Oxide
7358
25
4"
P
<100>
10
20
500
550
Prime
SSP w/2 Semi-Std. Flats
7375
525
4"
P
<100>
1
25
475
575
Test
w/2 Semi-Std Flats
7871
175
4"
P
<100>
1
10
500
550
DSP
w/Primary Flat Only, TTV <5µm, Bow <30µm
7375-OX
50
4"
P
<100>
1
25
475
575
Test
w/2 Semi-Std Flats & 10,000 A°±5% Thermal Oxide
BC77213
75
4"
P
<100>
.01
.02
500
550
Prime
w/2 Flats
BC79114
450
4"
P
<100>
1
10
500
550
DSP
w/2 Semi-Std. Flats
GC38892
14087
4"
P
<100>
1.3
3.7
Ingot
Ground 1Flat per U.S. Semi-Stds.
HC49138
4400
4"
P
<111>
.0015
.0035
Ingot
Ground, flatted & mounted
HS19155
9
4"
P
<111>±0.5°
.001
.005
325
375
DSP
Prime w/Primary Flat Only, TTV <1µm
HS39626
1375
4"
P
<100>
.001
.005
500
550
Prime
w/Semi-Std Flats
DP07-095
222
4"
P
<111>±1°
.024
.045
310
330
Prime
ER & Lapped w/Primary Flat Only
SOI11000
7
4"
P
<100>
1
10
280
320
SOI
CZ Handle DSP w/o oxide, Box: 1.4-2.1µm Thermal, Device 1-10 ohm-cm 35-40µm, TTV <10µm
GC38892-2
7140
4"
P
<100>
1.3
4.1
Ingot
Ground 2 Flats per U.S. Semi-Stds.
STK8414-2
975
4"
P
<100>
1
10
500
550
Prime
w/2 Semi-Std. Flats
HS39626-DO
75
4"
P
<100>
.001
.005
500
550
Prime
w/Semi-Std Flats & 2850 A°±5% Dry Thermal Oxide
HS39626-OX
234
4"
P
<100>
.001
.005
500
550
Prime
w/Semi-Std Flats & 2850 A°±5% Dry Chlorinated Thermal Oxide and Forming Gas Anneal
HS39626-WO
325
4"
P
<100>
.001
.005
500
550
Prime
w/2 Semi-Std Flats & 2850 A°±5% Wet Thermal Oxide
HS39626-DO9
100
4"
P
<100>
.001
.005
500
550
Prime
w/Semi-Std Flats & 900 A°±7% Dry Thermal Oxide
4A01-11732
346
4"
x
4" x 4" x 0.70mm Glass Borosilicate Wafer No Bevels, Surface Quality 80/50. (Schott D-263)
HC22001
15
4"
N+
<Any>
.0015
.003
Any
Epi
Layer N w/Any Resistivity & Thickness
7244-6014-859
7500
4"
N+
<100>
Any
Ingot
As-grown, Arsenic doped, Ground & Flatted
4I0-11370
150
4"
Intrinsic
<100>
>10,000
500
550
FZ
>10,000 ohm-cm 500-550µm Thick Prime DSP w/Primary Flat Only
4I20-18291-AS
25
4"
Intrinsic
<100>
>20,000
500
550
FZ
>20,000 ohm-cm 500-550µm Thick SSP Prime w/Primary Flat Only & 2850 A°±5% Dry Thermal Oxide
5" Wafer Listing
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6416M
4009
5"
P
<100>
.087
.092
Ingot
Ground, Flatted w/2 Flats, V-notch on Primary Flat
7244-6691-2B
4100
5"
P
<100>
<.007
Ingot
Ground w/2 Flats
7244-6013-427
2535
5"
N+
<111>
<=.007
Ingot
Ground, Flatted & Mounted, Arsenic doped
7244-6013-633
20524
5"
N+
<111>
.001
.01
Ingot
As-grown Arsenic doped with 3 Flats
AV381894
325
5"
Any
625±25
5" Any Type, Orientation, Resistivity 625±25µm Thick SSP with Primary Flat Only or 2 Std. Flats
6" Wafer Listing
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FA01-9900
4
6"
x.75mm
Pyrex
Transparent wafers with Edge Seam, Round No Flat
WC109484
1500
6"
N
<110>
1
10
Ingot
Ground w/ U.S. Primary Flat Only
GC38892-5
161197
6"
N
<100>
.025
.07396
Ingot
Ground & 1 Flat per U.S. Semi-Stds., Antimony doped
HS39560-2
25
6"
N
<100>
>1000
1143
1169
FZ
>1000 ohm-cm 1143-1169µm Thick DSP w/Primary Flat Only
FN06-10733-AS
50
6"
N
<100>
4
7
600
650
Prime
w/Primary Flat Only, LM, 10,000 A° WTO & 4,000 A° Stoichiometric LPCVD Nitride
FN06-10733
75
6"
N
<100>
1
10
600
700
Prime
w/Primary Flat Only & LM
7447
6
6"
P
<100>
1
20
530
585
Test
with Jeida Flat
7467
50
6"
P
<100>
1
50
600
700
6" P <100> 1-50 ohm-cm 600-700µm Thick SSP w/Primary Flat Only & 3,000 A°±5% Thermal Oxide
BC2234
175
6"
P
<100>
1
100
600
700
Prime
w/Primary Flat Only, LM Optional & 750 A°±10% Thermal Oxide
BC87992
100
6"
P
<100>
1
100
600
700
Test
w/Primary Flat Only & 20,000 A° ± 5% Thermal Oxide
C2TC017
2775
6"
P
<100>
1
100
Test
w/ Primary Flat Only.
GC19060
125
6"
P
<100>
10
30
650
700
Prime
w/Primary Flat Only
HS18730
23
6"
P
<100>
20
30
600
655
6" P <100> 20-30 ohm-cm 600-655µm Thick SSP w/Primary Flat Only
HS18909
1175
6"
P
<100>
1
30
650
700
Prime
w/Std. Notch
HS19222
5
6"
P
<100>off
1
30
700
750
Lapped
w/Primary Flat Only
HS37809
100
6"
P
<100>
1
100
600
700
6" P <100> 1-100 ohm-cm 600-700µm Thick SSP with 10,000 A°± 5% Thermal Oxide
HS77723
7
6"
P
<100>
.005
.025
390
410
Prime
with Primary Flat Only & LM
WC78987
875
6"
P
<100>
1
50
650
700
Prime
w/ Primary Flat Only
FP02-61160
200
6"
P
<100>
.001
.005
650
700
Prime
SSP w/Primary Flat Only
3162085
6000
6"
Any
<Any>
Any
Ingot
As-grown
STK9281
4
6"
Any
<Any>
0
100
Any
Etched
Coinrolled with Primary Flat Only.
WC99755
321
6"
Any
>600
6" Any Type, Orientation, Resistivity >600µm Thick SSP Coinroll w/Primary Flat Only or Notch
FN06-052808
4
6"
SOI
<100> >10 ohm-cm 851±5µm Thick DSP; B
>10
851±5
SOI
with Etch Cavities, Handle: N/P <100> >10 ohm-cm 851±5µm Thick DSP; BOX: 10,000A°, Device: P/N <100> 1-10 ohm-cm, 305±5µm
FN06-052820
8
6"
SOI
<100> 10-30 ohm-cm 665±5µm Thick DS
10
30
665±5
SOI
with etch cavities, Handle: P <100> 10-30 ohm-cm 665±5µm Thick DSP w/Primary Flat, Seq'l LM; Box:10,000 A°±5%, Device: N <100>1-10, 305±5µm
8" Wafer Listing
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IO9433
75
8"
N
<100>
10
40
675
775
8" N <100> 10-40 ohm-cm 675-775µm Thick SSP & 3,000 A° ±5% Thermal Oxide
GN16-12341
150
8"
N
<100>
>5000
700
750
FZ
>5000 ohm-cm 700-750µm Thick Prime SSP with Std. Notch
GN16-17277
400
8"
N
<100>±0.5°
8
10
700
750
FZ
8-10 ohm-cm 700-750µm Thick Prime DSP with US Std. Notch & M12 Laser Mark
IN08-11685
25
8"
N
<100>
1
30
700
750
Prime
SSP w/Std. Notch & 3,000 A° ± 10% Thermal Oxide
5196
775
8"
P
<100>
.005
.01
700
750
8" P <100> .005-.01 ohm-cm 700-750µm Thick SSP w/Notch & LM
ga08
225
8"
P
<100>
.008
.02
700
750
8" P <100> .008-.02 ohm-cm 700-750µm Thick SSP with EPI Layer
7574-2
1300
8"
P
<100>
.01
.03
675
775
8" P <100> .01-.03 ohm-cm 675-775µm Thick SSP w/Std. Notch & Poly Oxide Backseal.
BC9137
85
8"
P
<100>
10
20
705
745
8" P <100> 10-20 ohm-cm 705-745µm Thick SSP w/Semi-Std. Notch, TTV <10µm, Backside LM
HS18288
627
8"
P
<100>
0
50
585
775
Test
w/Notch & 10,000 A° ±5% Thermal Oxide
WC98987
2146
8"
P
<100>
1
50
700
750
Prime
SSP w/Std. Notch & LM
3012007A
50
8"
P
<100>
10
25
700
750
SOI
Wafer Box: 1900-4100 A°, SOI Layer 5-25 ohm-cm 2.6-3.2µm
BC118365
25
8"
P
<100>
1
100
700
750
8" P <100> 1-100 ohm-cm, 700-750µm Thick SSP w/Std. Notch & LaserMark.
GCR11485
200
8"
P
<100>
.5
100
700
750
8" P <100> .5-100 ohm-cm 700-750µm Thick SSP with Notch, Optional LM & 10,000 A°±5% Thermal Oxide
JK-11811
19
8"
P
<100>
1
100
675
775
8" P <100> 1-100 ohm-cm 675-775µm Thick SSP with Std. Notch only.
JK-11817
574
8"
P
<100>
1
100
675
775
8" P <100> 1-100 ohm-cm 675-775µm Thick SSP with Std. Notch only & 3,000A° ±5% Thermal Oxide.
JK-82019
25
8"
P
<100>
4
6
700
750
8" P <100> 4-6 ohm-cm 700-750µm Thick SSP w/Std. Notch & LaserMark
OCR71714
448
8"
P
<100>
.5
100
700
750
8" P <100> .5-100 ohm-cm 700-750µm Thick SSP with Notch, Optional LM & 2,000 A°±5% Thermal Oxide
STK950-2
172
8"
P
<100>
1
100
675
775
Test
w/Std. Notch
STK99500
23
8"
P
<100>
1
10
975
1025
DSP
Prime w/Std. Notch
WC119234
450
8"
P
<100>
Any
650
750
Reclaim
w/Std. Notch & LPD's <30 @ .3µm
7574-2-OX
425
8"
P
<100>
.01
.05
675
775
8" P <100> .01-.05 ohm-cm 675-775µm Thick SSP w/Std. Notch & 3,000 A°±5% Thermal Oxide
STK9500-2
175
8"
P
<100>
1
100
700
750
8" P <100> 1-100 ohm-cm 700-750µm Thick SSP w/Std. Notch
OP00-9833-AS
50
8"
P
<100>
1
100
700
750
8" P <100> 1-100 ohm-cm 700-750µm Thick SSP w/Std. Notch & 500 A°±10% Dry Thermal Oxide
OP03-11146-OX
1474
8"
P
<100>
1
30
675
775
8" P <100> 1-30 ohm-cm 675-775µm Thick SSP with Std. Notch & 3,000 A°±5% Thermal Oxide
GP11-13193
25
8"
P
<111>off4°
4.5
6.5
700
750
Prime
with Notch & Poly Backseal
HP01-T200R
210
8"
P
<100>
0
100
>700
Etched
Edge-rounded Coinroll w/Std. Notch
OP03-11146
3025
8"
P
<100>
1
50
725
750
8" P <100> 1-50 ohm-cm 725-750µm Thick Etch/Etch with Std. Notch
WC10103~P1
1425
8"
P
<100>
3
40
700
750
Prime
SSP w/Std. Notch, optional Lasermark
EG9911
150
8"
SOI
SOI
Soitec Unibond Wafer Si Thickness 1500nm SiO2 1000nm
GA06-13634
350
8"
N/As
<100>
<.005
675
775
8" N/As <100> <.005 ohm-cm 675-775µm Thick SSP with 3,000 A°±5% Thermal Oxide
9911
925
8"
P/Bo
<100>
>10
725±25
DSP
Prime w/ STD. Notch TTV <5µm, Oi <12 ppma, B&W <30µm
GC19195
1775
8"
P/Bo
<100>
0
100
675
775
8" P/Bo <100> 0-100 ohm-cm 675-775µm Thick SSP with Std. Notch & Backside LM
GP26-12991
25
8"
P/Bo
<100>
>1000
710
740
Prime
SSP MCZ w/Semi-std Notch and Low Oxygen (<12ppma) & Low Carbon. FS by SEH.
HBF-11226
413
8"
1.10mm
DSP
Glass Wafer w/ Notch
8SBF-18235
4
8"
Schott
DSP
(60/40) Wafer with Notch
12" Wafer Listing
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STK9754
240
12"
P
<100>
1
100
750
800
DSP
w/Std Notch & LM
Ingot Wafer Listing
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Print Ingot Listing
Qty on
Hand
HS4962210
700
2.5"
N
<100>
.14
.25
Ingot
Ground
BC17967
2600
3"
P
<111>
.014
.02
Ingot
Ground & Flatted per U.S. Stds.
7244-1272
2300
3"
P
<111>
<10
Ingot
Ground, Flat & Mounted
CP17-10041
10200
3"
P
<100>
1
10
Ingot
Ground w/0 Flats or 2 Flats per Semi-Stds.
7244-2718-923
15900
3"
N/Sb
<111>
.005
.05
Ingot
As-grown Ground & Flatted
7244-4682-126A
4000
4"
N
<111>
1
9
Ingot
As-grown Phosphorus doped
GC38892
14087
4"
P
<100>
1.3
3.7
Ingot
Ground 1Flat per U.S. Semi-Stds.
HC49138
4400
4"
P
<111>
.0015
.0035
Ingot
Ground, flatted & mounted
GC38892-2
7140
4"
P
<100>
1.3
4.1
Ingot
Ground 2 Flats per U.S. Semi-Stds.
7244-6014-859
7500
4"
N+
<100>
Any
Ingot
As-grown, Arsenic doped, Ground & Flatted
6416M
4009
5"
P
<100>
.087
.092
Ingot
Ground, Flatted w/2 Flats, V-notch on Primary Flat
7244-6691-2B
4100
5"
P
<100>
<.007
Ingot
Ground w/2 Flats
7244-6013-427
2535
5"
N+
<111>
<=.007
Ingot
Ground, Flatted & Mounted, Arsenic doped
7244-6013-633
20524
5"
N+
<111>
.001
.01
Ingot
As-grown Arsenic doped with 3 Flats
WC109484
1500
6"
N
<110>
1
10
Ingot
Ground w/ U.S. Primary Flat Only
GC38892-5
161197
6"
N
<100>
.025
.07396
Ingot
Ground & 1 Flat per U.S. Semi-Stds., Antimony doped
3162085
6000
6"
Any
<Any>
Any
Ingot
As-grown
Float Zone Wafer Listing
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Print Float Zone Listing
Qty on
Hand
8445
75
3"
N
<111>
6
12
245
325
FZ
6-12 ohm-cm 245-325µm Thick Test
CP15-10503
55
3"
Intrinsic
<100>
>10,000
675
725
FZ
>10,000 ohm-cm 675-725µm Thick Prime DSP w/Primary Flat Only, TTV <1µm & Backside LM
4I0-11370
150
4"
Intrinsic
<100>
>10,000
500
550
FZ
>10,000 ohm-cm 500-550µm Thick Prime DSP w/Primary Flat Only
4I20-18291-AS
25
4"
Intrinsic
<100>
>20,000
500
550
FZ
>20,000 ohm-cm 500-550µm Thick SSP Prime w/Primary Flat Only & 2850 A°±5% Dry Thermal Oxide
HS39560-2
25
6"
N
<100>
>1000
1143
1169
FZ
>1000 ohm-cm 1143-1169µm Thick DSP w/Primary Flat Only
GN16-12341
150
8"
N
<100>
>5000
700
750
FZ
>5000 ohm-cm 700-750µm Thick Prime SSP with Std. Notch
GN16-17277
400
8"
N
<100>±0.5°
8
10
700
750
FZ
8-10 ohm-cm 700-750µm Thick Prime DSP with US Std. Notch & M12 Laser Mark
Epi Wafer Listing
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Print Epi Listing
Qty on
Hand
SAP-16658
50
2"
Sapphire
430±20
Epi
Ready Wafer w/Primary Flat Only, TTV <10µm, Bow & Warp <=10µm, Ra =<0.3nm
BC88996
172
3"
N
<111>off3-4°
>.01
356
406
Epi
layer= 7.5-10 ohm-cm 20-25µm
HC22001
15
4"
N+
<Any>
.0015
.003
Any
Epi
Layer N w/Any Resistivity & Thickness
SOI (Silicon-On-Insulator) Wafer Listing
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SOI material is used widely in applications such as
telecommunication products and optical devices, dielectrically isolated integrated
circuits, solid state relays and micro-machined components for sensors and actuators.
NOVA offers an innovative and powerful through-wafer interconnect technology which can
allow device designers in both standard IC and MEMS device industries overcome packaging
problems associated with their designs. NOVA offers a fully customized engineered
substrate solution to minimize your fabrication headaches.
Typical Diameters range from 4" to 300mm. Please complete our
Request a Quote form with your specifications so
NOVA can quote your needs!
Epitaxial Wafer Listing
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Epitaxial silicon wafers are made through the precipitation of a
monocrystalline silicon coat. The substratum consists of a polished silicon wafer.
Epitaxial wafers are used for discrete applications and, because of their extraordinary
quality as semiconductors, for the manufacturing of the most progressive and highly
integrated semiconductor construction elements (ICs).
Typical Diameters range from 3" to 300mm. Please complete our
Request a Quote form with your specifications so
NOVA can quote your needs!
Solar Wafer Listing
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NOVA creates significant competitive advantages, in terms of cost
and quality, which are passed through the value chain of the entire silicon-based solar
cell manufacturing market. The resulting single crystal wafers are manufactured and sold
to meet the growing demands of the photovoltaic industry's major solar cell and module
manufacturers, helping to further satisfy rapidly expanding end-user demand currently
growing by 35 percent per year. Because NOVA's sources are designed for very high volume
materials handling, as opposed to traditional precision semiconductor manufacturing that
has been used to service the photovoltaic industry's silicon wafer needs in the past,
NOVA can allow far better utilization of raw silicon feedstock at significantly lower
cost within the supply chain.
Typical Diameters range from 3" to 125mm psuedo square to 300mm. Please contact NOVA's specialist or complete our
Request a Quote form with your specifications so
NOVA can quote your needs!