Acronyms & Symbols

A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

Å = Angstrom
AC = Ascut
Al = Aluminum
Al₂O₃ = Alumina
AE = Acid Etch
As = Arsenic
ARM = After Receipt of Material
ARO = After Receipt of Order
ARP = After Receipt of Payment
ASTM = American Standard Test Method
Au = Gold
Ag = Silver

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B = Boron
BO = Back ordered
BMD = Bulk Micro Defects
BOX = Buried Oxide Layer
BSD = Backside damaged
BV = Breakdown Voltage

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C = Centigrade/Celcius
CAD = Cash Against Documents
CIA = Cash in Advance
CE = Caustic Etch
CIF = Cost + Insurance + Freight
cm = centimeters
CMOS = Complementary Metal Oxide Semiconductor
CMP = Chemical Mechanical Polishing
CoQC = Certificate of Quality Conformance
CP = Crystal Puller
CR = coinroll
Cr = Chrome
Cu = Copper
CVD = Chemical Vapor Deposition
CZ = Czochralski method of pulling single crystal

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DRAM = Dynamic Random Access Memory
DSP = Double side polished

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E = Etched
ER = Edge rounded
EG = Enhanced Gettering
EPI = Epitaxy layer

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F = Fahrenheit
FOB = Free On Board
FS = Factory sealed
FZ = Float Zone method of pulling crystal

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g = Grams
Ga = Gallium
GaAs = Gallium Arsenide
GBIR = Global flatness, back-referenced
Ge = Germanium

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H₂ = Hydrogen gas
H₂O₂ = Hydrogen Peroxide
HF = Hydrofluoric Acid

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IC = Integrated Circuits

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JFET = Junction Field Effect Transistor

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K = Kelvin
Kg = Kilogram
KOH = Potassium Hydroxide

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L = Lapped
LPD = Light Point Defects
LPCVD = Low Pressure Chemical Vapor Deposition
LTO = Low Temperature oxide

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MBE = Molecular Beam Epitaxy
MEMS = Micro-Electro Mechanical System
mm = millimeter; 1/1000 of a meter and 0.03937 inch
mm/min = millimeters per minute
MOCVD = Metal Organic Chemical Vapor Deposition
MOSFET = Metal Oxide Semiconductor Field Effect Transistor
Micron = �m

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N = Silicon doped to create excess negative charge carriers (electrons)
N+ = Heavily doped, N type silicon
N₂ = Nitrogen gas
Ni = Nickel
nm = Nanometers

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O₂ = Oxygen
Ohm-cm = Ohms per sq. cm
OISF = Oxidation- Induced Stacking Fault
Ox = Oxide

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P = Silicon doped to create excess positive charge carriers (holes)
P = Phosphorous
P- = Lightly doped P-type silicon wafer
P+ = Heavily doped P-type silicon wafer
P/P+ = Lightly doped P-type epi layer on a heavily doped P-type substrates
P/P- = Lightly doped P-type epi layer on a lightly doped P-type substrates
Pd = Palladium
PE = Plasma Enhanced
P/E = Polished/ Etched
PECVD = Plasma Enhanced Chemical Vapor Deposition
PFZ = Precipitate Free Zone
PPMA = Parts per million atoms
Pt = Platinum

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RAM = Random Access Memory
RF = Radio Frequency
RRV = Radial Resistivity variation

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Sb = Antimony
SBIR = Site Flatness, back-referenced
SBSD = Soft Backside Damage
SFQR = Site Flatness, best-fit, front-referenced
Si = Silicon
SIMOX = Separation by Implantation of Oxygen
SiO = Silicon Monoxide
SiO₂ = Silicon Dioxide
SOI = Silicon on Insulator
SOS = Silicon on Sapphire
SRAM = Static Random Access Memory
SSP = Single Side Polished
STD = Standard
STIR = Site TIR (Total Indicated Reading)

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T = Temperature
Ta = Tantalum
Ti = Titanium
TIR = Total Indicated Reading
TOX = Gate Oxide Thickness
TTV = Total Thickness Variation

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ULSI = Ultra Large-scale Integration

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VLSI = Very Large Scale Integration
VPE = Vapor Phase Epitaxy

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W = Tungsten

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