1"-2" Wafer Listing
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HS18810
128
1"
N
<100>
1
10
660
712
SSP
Notch
W/ 3,000 Å ±5% THERMAL OXIDE.
WC28242
50
2"
N
<100>
1
10
254
305
TEST
8289
400
2"
P
<100>
1
10
254
305
TEST
SSP
HS4962210-1
26
2.5"
N
<100>
0.14
0.23
496
521
LAPPED & ER COINROLLED
HS4962210
1540
2.5"
N
<100>
0.14
0.23
INGOT
~2.5" N/As GROUND INGOT
BC5197
1800
2.5"
P
<111>
0.025
0.028
INGOT
GROUND & FLATTED INGOT
3" Wafer Listing
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CA02-10016 (GaAs)
3
3"
N/Te
<100>
2.3E18
480
520
SSP*
1
N(Te) cc: 2.3x10E 18, MOBILITY: 2370, EPD: 4x10E4, 500�m ±20�m SSP GaAs wafers w/ 1 FLAT & LOW TTV, <3�m.
WC68229-1
74
3"
N
<100>
< .005
356
406
SSP
HS18229
475
3"
N/As
<100>
< .005
355
406
SSP
WC37620-NV
350
3"
N/Ph
<100>
1
10
356
406
PRIME
1
SSP
7395
3575
3"
N/Ph
<100>
1
10
356
406
PRIME
1
W/ PRIMARY FLAT ONLY & 3,000 Ang.± 5% THERMAL OXIDE
WC37620
50
3"
N/Ph
<100>
1
10
356
406
PRIME
1
SSP W/ PRIMARY FLAT ONLY
NPO7288
50
3"
N
<100>
5
10
330
432
TEST
WC37573
25
3"
N
<100>
5
10
356
406
PRIME
2
W/ 2 SEMI-STD FLATS
7244-1598
1200
3"
N/As
<100>
ANY
ANY
INGOT
1
MOUNTED ARSENIC Si INGOT
BC4030
148
3"
N
<111>
< .013
550
625
ASCUT
BC971942~P1
375
3"
N/Sb
<111>
0.005
0.02
305
457
2
SSP
7244-2718-923
30550
3"
N/Sb
<111>
0.005
0.05
INGOT
ANTIMONY(Sb), AS-GROWN,GROUND & FLAT, GROUND INGOT
BC39650
25
3"
N/Sb
<111>
0.008
0.016
356
406
PRIME
SSP WITH TTV <2�m
7244-2718-935B
14700
3"
N/Sb
<111>
0.01
0.05
INGOT
ANTIMONY DOPED, AS-GROWN &/OR GROUND&FLATTED INGOT
BC3032
73
3"
N
<111>
.05
0.10
300
406
ASCUT
COINROLL
7244-1602
4500
3"
N/ARS
<111>
1.17
2.11
INGOT
ARSENIC DOPED, AS-GROWN INGOT
8445
275
3"
N
<111>
6
12
280
300
PRIME
<111>OFF 3°±1° TOWARD THE NEXT <1-1-0>PLANE; SSP FZ Si WAFERS
BC88996
173
3"
N/N+
<111>
> .01
356
406
EPI
Sb DOPED, (111) OFF 3-4° WITH EPI LAYER= N (PHOS) 7.5-10 OHM-CM, 20-25�m THICK
HC40561
28
3"
N/Ph
ANY
ANY
ANY
ANY
ANY
ASCUT
PHOS DOPED, AS-CUT EDGEROUND Ge WAFERS
7244-6012-91A
816
3"
P
<100>
< .005
429
436
ASCUT
2
W/ 2 SEMI-STD FLATS
7244-69
3800
3"
P
<100>
0.01
0.05
INGOT
2
AS-GROWN&/OR GRD & 2 FLAT INGOT
CP17-10041
16300
3"
P
<100>
1
10
INGOT
GROUND INGOT, WITH 0 FLATS OR 2 FLATS PER SEMI-STDS
WC27806
350
3"
P
<100>
1
20
356
406
TEST
SSP
STK8162
300
3"
P
<100>
10
30
305
355
PRIME
1 FLAT
W/ PRIMARY FLAT ONLY
CP12-10712-03
4
3"
P
<100>
10
30
305
355
1
SSP W/ PRIMARY FLT & <100 PART @.3�m; NO SCRATCHES, PITS
CP01-10973
25
3"
P
<100>
.001
.005
355
405
PRIME
2
SSP W/ 500Å ± 10% Si NITRIDE
CP03-10685
25
3"
P
<100>
>1
(Falling 2-18)
600
650
2
SSP W/ 2 SEMI-STD FLATS
BC17967
7200
3"
P
<111>
.014
.02
INGOT
GROUND & FLAT Si INGOT PER US STDS.
7244-1272
2300
3"
P
<111>
ANY
INGOT
GROUND, FLAT & MOUNTED INGOT
4" Wafer Listing
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HC44002 (Ge)
50
4"
N
ANY
5
40
762
813
ASCUT
Ge WAFERS
DN03-10624
100
4"
N
<100>
< .005
500
550
PRIME
2
SSP W/ 2 SS FLATS
STK8414
523
4"
N/Ph
<100>
1
10
500
550
PRIME
1 FLAT
W/ US PRIMARY FLAT ONLY (SOME W/ 2 FLATS)
4N0-10848
24
4"
N/Ph
<100>±1°
>5000
150
160
FZ
1
DSP FZ W/ SEMI-STD PRIMARY FLAT ONLY; LIFETIME>2 MILLISECONDS
4N0-10854
216
4"
N/Ph
<100>±1°
>5000
173
187
FZ
1
LAPPED, ETCHED & ER W/ SEMI-STD PRIMARY FLAT ONLY
7244-6014-859
9400
4"
N/As
<100>
ANY
ANY
INGOT
ARSENIC DOPED; GROUND OR G&F INGOTS
BC1102~P1
2000
4"
N
<111>
.008
.018
INGOT
BY MEMC
7244-4682-126A
4000
4"
N/Ph
<111>
< .02
INGOT
AS-GROWN
DN1-10832
100
4"
N
<111>
1500
2500
382
418
FZ
SSP W/ SEMI-STD FLATS (MANUFACTURED BY WACKER)
HC44004 (Ge)
23
4"
N
ANY
5
40
1016
1067
ASCUT
Ge WAFERS *
HC44003 (Ge)
50
4"
N
ANY
5
40
762
813
ASCUT
Ge WAFERS*
HC44001 (Ge)
24
4"
N
ANY
5
50
635
686
ASCUT
Ge WAFERS*
HC22001
23
4"
N/N+
ANY
.0015
.003
ANY
ANY
EPI
WITH EPI LAYERS = ANY RESISTIVITY & THICKNESS
DN10-40155
23
4"
N/N+
<100>
.007-.02/2.53=2.97 OHM-CM; 375-425/15.437-17.062�m THICK SSP EPI WAFERS W/ OXIDE BACKS
HS39626
100
4"
P
<100>
.001
.005
500
550
PRIME
SSP W/ STD FLATS
HS39626-OX
50
4"
P
<100>
.001
.005
500
550
PRIME
SSP W/ STD FLATS & THERMAL OXIDE
DP03-11187
75
4"
P
<100>
.2
.4
500
550
PRIME
2
SSP W/ 2 SEMI-STD FLATS
STK8414-2
113
4"
P
<100>
1
10
500
550
PRIME
1 FLAT
W/ U.S. PRIMARY FLAT ONLY & LM
STK9671
86
4"
P
<100>
1
10
500
550
PRIME
1 FLAT
SSP W/ SEMI-STD FLATS; LPD'S <20@.3�m
DN03-10041
15300
4"
P
<100>
1
10
INGOT
0 FLAT
GROUND INGOT, WITH 0 FLATS
SOI11000
29
4"
P
<100>
1
10
SOI
HANDLE: 300±20�m THICK DSP W/OUT OXIDE; BOX: 1.5-2�m THERMAL OXIDE; DEVICE: 35-40�m
BC79114
450
4"
P
<100>
1
50
475
550
DSP
W/ SEMI-STD FLATS
GC38892
112876
4"
P
<100>
1.3
3.7
INGOT
1 FLAT
GROUND W/ 1FLAT ONLY INGOT PER U.S. SEMI-STD.
GC38892-2
79214
4"
P
<100>
1.3
4.1
INGOT
GROUND WITH 2 U.S. FLATS PER U.S. SEMI-STDS
GC39152
33
4"
P
<100>
1.3
3.7
500
550
PRIME
1 FLAT
W/ U.S. PRIMARY FLAT ONLY & PARTICLES<10@.3�m
GC29152-1
535
4"
P
<100>
1.3
4.55
610
630
ASCUT
2
ASCUT, ER Si WAFERS W/ 2 SEMI-STD. FLATS
BC27819
293
4"
P
<100>
20
40
500
550
PRIME
2
W/ 2 FLATS PER SEMI-STD
7352A
1814
4"
P
<100>
3.75
3.85
INGOT
NON-STD
GROUND W/2 FLATS & V-NOTCH ON PRIMARY FLAT
7352B
2602
4"
P
<100>
3.85
3.89
INGOT
NON-STD.
GROUND W/2 FLATS & V-NOTCH ON THE PRIMARY FLAT!
7384~P1
50
4"
P
<100>
5
25
500
550
PRIME
SSP W/ 10K THERMAL OXIDE, 200Å Ti, & 1500Å Pt
7358
63
4"
P
<100>
5
25
500
550
PRIME
2
W/ 2 SEMI-STD FLATS
7375
1050
4"
P
<100>
1
25
475
575
TEST
2
W/ 2 FLATS; LPD�S <30@ .5
HC49138
8100
4"
P
<111>
.0015
.0035
INGOT
GROUND & FLAT INGOT PER U.S. SEMI-STDS
7425
50
4"
P+
<111>
0.008
0.02
500
540
PRIME
OFF 2.5-3.5°, WITH OXIDE BACKSEAL & 1 SEMI.STD. FLAT, FS
7384~P3
25
4"
P
<111>
1
10
500
550
TEST
1
OREN. OFF 4° W/ 1 SEMI-STD FLAT
GC38892-4
153435
4"
P
<111>
3.42
8.7
INGOT
GROUND INGOT & 1 FLAT PER U.S. SEMI-STDS.
5" Wafer Listing
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GC31036
481
5"
ANY
ANY
ANY
ANY
ANY
ANY
LAPPED
LAPPED & EDGE-ROUNDED COINROLL Si WAFERS (MOST ARE FALLING THIN--IE: ~15 MILS)
6387M
2987
5"
N/Sb
<100>
.044
.047
INGOT
Sb, GROUND & FLAT INGOT W/2 FLATS & V-NOTCH ON PRIMARY FLAT
7479-1
409
5"
N
<100>
1
10
380
405
ETCH
ETCH, EDGE-ROUNDED Si WAFERS COIN-ROLLED
EN03-9778
28
5"
N/Ph
<100>
10
50
600
650
PRIME
NOTCH
W/ PRIMARY NOTCH ONLY PER SEMI-STDS
EN03-10346
75
5"
N/Ph
<100>±1°
2.5
5.5
620
625
PRIME
1
SSP W/ PRIMARY FLAT ONLY (ON <110>±1°, 42..
EN03-10345
100
5"
N/Ph
<100>±1°
3
10
620
625
PRIME CZ
1
SSP W/ PRIMARY FLAT ONLY (ON <110>±1°, 42�
73871-2
160
5"
N
<100>
ANY
ANY
630
730
LAPPED
NON-STD
LAPPED & ER W/2 FLATS, PRIMARY FLAT HAS V-NOTCH, COIN-ROLLED
7244-6013-427
6337
5"
N/As
<111>
< .007
INGOT
GROUND, FLAT & MOUNTED INGOT
7244-6013-633
20524
5"
N/As
<111>
.001
.01
INGOT
3 FLATS
ARSENIC DOPED, AS-GROWN INGOT W/3 FLATS
WC67391F
45
5"
N/Ph
<111>
> 100
ANY
ANY
DSP
PHOS DOPED, FZ, US, Si WAFERS
EN03-SOI9554
17
5"
N
<100>±1°
3
10
620
630
PRIME
HANDLE WAFER: SSP FZ Si WAFERS; BURIED OXIDE: 450nm±25nm THERMAL OXIDE
BC87412
175
5"
P
<100>
0.005
0.015
600
650
PRIME
PER SEMI-STDS 2 STD FLATS
7244-6691-2B
7720
5"
P
<100>
.005
.02
INGOT
NOTCH
AS-GROWN, G&F, GROUND & MOUNTED W/NOTCH INGOT
GC211001-4
163
5"
P
<100>
.01
.02
600
650
PRIME
1 FLAT
W/PRIMARY FLAT ONLY AND PARTICLES <20@ .5 <20 @ 0.5>
6416M
4009
5"
P
<100>
.087
.092
INGOT
NON-STD
GROUND & FLAT INGOT W/V-NOTCH ON PRIMARY FLAT
7479-3
108
5"
P
<100>
1
10
380
405
ETCH
EDGE-ROUNDED Si WAFERS COIN-ROLLED
HS28778
25
5"
P
<100>
ANY
ANY
600
650
PRIME
1 FLAT
W/ LASERMARK
73871
44
5"
P
<100>
> 100
630
730
LAPPED
NON-STD
EDGE-ROUNDED Si WAFERS W/2 FLATS, PRIMARY FLAT HAS V-NOTCH
7409-1
25
5"
P
<100>
11
50
600
650
PRIME
NOTCH
<100>on ±.5°, PRIME DSP Si WAFERS WITH NOTCH ON (110) PLANE & LM ON FRONT & TTV < 10� MAX
7400-2
1702
5"
P
<100>
17
19.2
INGOT
G & F INGOT W/ OXYGEN 31.5-32.6 PPMA
WC98615
25
5"
P
<100>
20
40
600
650
PRIME
2
FS BY MEMC
7387
89
5"
P
<100>
42
52.1
725
750
ASCUT
NON-STD
W/2 FLATS, PRIMARY FLAT HAS V-NOTCH
7285-2
125
5"
P
<111>
.01
.02
600
650
PRIME
W/ ETCHED BACKS & PRIMARY FLAT ONLY
GC211001-7
64
5"
P
<111>
.01
.02
600
650
RECLAIM
UNSEALED COIN-ROLLED
72424~P1
50
5"
P
<111>
3
5
600
640
PRIME
<111>OFF 3-5°, W/ EG BACKS & 1 FLAT
6" Wafer Listing
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RC2-10870
24
6"
RECLAIM
SERVICE TO RECLAIM/RECYCLE 6" W/NOTCH TO >600�m THICK; LPD�S<30@ .5�m
FA01-9900
4
6"
ANY
ANY
ANY
ANY
750
PYREX
6" X .75mm THICK PYREX WAFERS WITH EDGES SEAMED.
3162085
10500
6"
ANY
ANY
ANY
ANY
INGOT
AS-GROWN INGOT
FN0600-700
76
6"
N/Sb
<100>
.008
.02
600
700
ETCHED
1
W/ PRIMARY FLAT
GC38892-5
206245
6"
N
<100>
.025
.074
INGOT
1 FLAT
GROUND & 1 FLAT PER U.S. SEMI-STDS.
HS29284
722
6"
N
<100>
1
100
600
700
TEST
1 FLAT
(NOTE: 100sl W/ 10,000 ű5% THERMAL OXIDE)
FN03-11006
96
6"
N
<100>
1
30
>675
PRIME
NOTCH
LAPPED, ER W/ SEMI-STD V-NOTCH
FN05-10681
125
6"
N
<100>±1°
>10,000
350
400
DSP
1
FZ W/ STD PRIMARY FLAT ONLY, TTV <3�m
FN02-61465
25
6"
N
<100>
10
20
490
526
SSP
W/ STD. FLAT
FN05-11081-2
75
6"
N/Ph
<100>
4.5
9
622.3
647.7
DSP
W/ STD. PRIMARY FLAT ONLY, TTV <3�m, B/W <20�m
FN05-11081
75
6"
N/Ph
<100>
4.5
9
672.3
697.7
DSP
W/ STD. PRIMARY FLAT ONLY, TTV <3�m, B/W <20�m
FN06-10733
26
6"
N
<100>
5
75
610
690
SSP
1
W/ PRIMARY FLAT ONLY
WC109484
1500
6"
N/Ph
<110>
1
10
INGOT
1 FLAT
GROUND W/ U.S. PRIMARY FLAT ONLY, PER U.S. SEMI-STD. INGOT
FP0-11183
10.78
6"
P
<100>
>5000
FZ
0
INGOT AS GROWN W/ NO FLATS OR NOTCH
FP02-61160
25
6"
P
<100>
.0045
.007
490
526
SSP
W/ STD FLAT
GC49266
525
6"
P
<100>
.005
.08
1175
1225
DSP
NOTCH
PRIME DSP Si WAFERS W/V-NOTCH, TTV <3�m & ><10 PARTICLES @ 0.5�m><3�m
WC99755
50
6"
P
<100>
> 1
710
740
SSP
1 FLAT
HS19045
175
6"
P
<100>
1
30
600
700
SSP
V-NOTCH
PRIMARY V-NOTCH W/ 3K THERMAL OXIDE
FP02-10962
25
6"
P
<100>
1
30
650
700
PRIME
NOTCH
SSP W/ STD. NOTCH ONLY & TTV <1�m, B/W <30�m PER US SEMI-STDS.
HS18004
18
6"
P
<100>
1
50
600
650
PRIME
1 FLAT
W/ .35�m STEPPED MASKING, RESIST STRIP, DRY ETCH UP TO 1� TRENCH, 1500A TiN ON TOP
HS19222
380
6"
P
<100>
1
100
600
700
VIRGIN TEST
1 FLAT
W/ PRIMARY U.S. SEMI-STD FLAT, TTV <40�m, TIR <15�m,
7448
250
6"
P
<100>
>1
645
705
TEST
W/ 2K Å THERMAL OXIDE
HS38780
125
6"
P
<100>
1
50
650
700
PRIME
1 FLAT
SSP W/ PRIMARY FLAT ONLY & 10,000 ANG. THERMAL OXIDE ±5%
BC38330
3359
6"
P
<100>
ANY
ANY
>550
RECLAIM
SSP
7296~P1
25
6"
P
<100>
1000
2000
650
700
DSP
FZ
AV38078
7
6"
P
<100>
> 3500
765
1260
EDGE-ROUNDED
NOTCH
HS89121
14
6"
ANY
<100>
ANY
ANY
1150
1350
PRIME
NOTCH
SSP W/ STD. NOTCH, TTV </=3�m
WC78987
250
6"
P
<100>
1
50
650
700
SSP
1 FLAT
W/ PRIMARY FLAT ONLY
FP05-10481
9256
6"
P
<100>
ANY
ANY
600
700
TEST
1
SSP W/ 1 FLAT ONLY
9834
548
6"
P
<110>
10
20
610
640
PRIME
1
LASERMARK
FP04-10107
1335
6"
P
<100>
0
100
600
700
NOTCH
SSP W/ NOTCH & 3,000ű5% THERMAL OXIDE
FP16-18828
719
6"
ANY
<100>
ANY
ANY
600
700
NOTCH
SSP W/ NOTCH ONLY & TTV </= 15�m
7467
94
6"
P
<100>
5
30
625
725
TEST
1
W/ 1 SEMI STD PRIMARY FLAT; TTV <10
HS18854
150
6"
P
<100>
1
30
650
700
PRIME
NOTCH
TTV </= 3�m
200mm Wafer Listing
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HS18590
175
200mm
ANY
ANY
ANY
ANY
760
890
SSP
HS49355
24
200mm
N
<100>
1
10
700
750
PRIME
NOTCH
W/ STD. NOTCH, OXIDE POLY BACK W/ LM ON BACKSIDE
JK-81940
48
200mm
N/N+
<100>
EPI
.0015-.0035/.877-.979 OHM-CM, 710-740/6.4-7.56�m THICK SSP EPI W/ POLY, OX BKS
JK-81699
50
200mm
N/P+
<100>
EPI
.01-.02/8-10 OHM-CM, 710-740/13-15�m THICK SSP EPI W/ OX BKS &LM
3012007A
27
200mm
ANY
ANY
ANY
ANY
ANY
ANY
RECLAIMABLES
OP00-9809
5050
200mm
P
<100>
<.02
675
775
TEST
NOTCH
SSP W/ V-NOTCH & ETCHED BACKSIDE
5196
15
200mm
P
<100>
.005
.02
ANY
ANY
DSP
NOTCH
14-DSP, 1-AS CUT UNSEALED
WC10103~P1
15
200mm
P
<100>
.5
100
705
740
PRIME
WC117207~P1
45
200mm
P
<100>
.5
50
>712
LAPPED
COINROLL
7574-2
200
200mm
P
<100>
.700
1.1
710
740
PRIME
NOTCH
SSP W/ SEMI-STD NOTCH & POLYBACKS
HP01-T200SSP
926
200mm
P
<100>
0
100
650
775
SSP
NOTCH
W/ STD. NOTCH & LPD�S <100@.3
7574-1
200
200mm
P
<100>
1
100
690
760
TEST
W/ NOTCH & PLOY BACKS .8�m±10%
HP01-T200R
18765
200mm
P
<100>
1
100
700
750
RECLAIMABLE
SSP
OP00-9833
9483
200mm
P
<100>
1
100
695
750
TEST
NOTCH
WC98987
94
200mm
P
<100>
10
25
700
750
SSP
NOTCH
W/ STD. NOTCH & OPTIONAL LM
JK-82058
75
200mm
P
<100>
1500
2000
700
750
SSP
NOTCH
W/ ECHED BACKS & STD. NOTCH FZ
JK-82019
25
200mm
P
<100>
2
4
710
740
PRIME
NOTCH
SSP W/ ETCH BACKS & LM OPPOSITE OF NOTCH
9911
250
200mm
P
<100>
9
18
712
762
DSP
NOTCH
W/ LASERMARK
GC19195
200
200mm
P or N
<100>
>1
650
750
VIRGIN TEST
NOTCH
SSP
OP03-11146
75
200mm
P
<100>
>25
>650
TEST
NOTCH
SSP W/ PART <30@ .3�m
BC9137
75
200mm
P
<100>
ANY
ANY
ANY
ANY
PATTERN
PATTERNED SIMOX WAFERS
JK-81088
600
200mm
P/P+
<100>
EPI
.005-.01/9.9-12.6815 OHM-CM; 705-745/3.8-4.2�m THICK SSP PRIME EPI W/ POLY OX BKS, LM
JK-81985
100
200mm
P/P+
<100>
EPI
.005-.01-9.9-12.6815 OHM-CM; 705-745/2.85-3.15�m THICK, SSP EPI W/ POLY OX BKS & LM
300mm Wafer Listing
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Print 300mm Listing
Qty on
Hand
PP01-9818
125
300mm
P
<100>±1°
1
100
750
800
DSP
Litho. Grade w/ std. notch, LM, Warp <50�m, SFQR><.18�m (95% PUA; 26x33mm), LPD><50@.16�m
NP-T300R
28
300mm
P
<100>
1
100
750
800
DSP
W/ FILMS OR PATTERNS
NP01-T300S
13
300mm
P
<100>
1
100
750
800
RECLAIMABLE
DSP
STK9754
25
300mm
P
<100>
1
100
750
800
DSP
Prm Grade W/ Site Flatness SFQR=0.15�m(Site Size 26x33 mm w/95% Global>
Ingot Listing
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Print Ingot Listing
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Hand
HS4962210
1540
2.5"
N
<100>
0.14
0.23
INGOT
~2.5" N/As GROUND INGOT
BC5197
1800
2.5"
P
<111>
0.025
0.028
INGOT
GROUND & FLATTED INGOT
7244-1598
1200
3"
N/As
<100>
ANY
ANY
INGOT
1
MOUNTED ARSENIC Si INGOT
7244-2718-923
30550
3"
N/Sb
<111>
0.005
0.05
INGOT
ANTIMONY(Sb), AS-GROWN,GROUND & FLAT, GROUND INGOT
7244-2718-935B
14700
3"
N/Sb
<111>
0.01
0.05
INGOT
ANTIMONY DOPED, AS-GROWN &/OR GROUND&FLATTED INGOT
7244-1602
4500
3"
N/ARS
<111>
1.17
2.11
INGOT
ARSENIC DOPED, AS-GROWN INGOT
7244-69
3800
3"
P
<100>
0.01
0.05
INGOT
2
AS-GROWN&/OR GRD & 2 FLAT INGOT
CP17-10041
16300
3"
P
<100>
1
10
INGOT
GROUND INGOT, WITH 0 FLATS OR 2 FLATS PER SEMI-STDS
BC17967
7200
3"
P
<111>
.014
.02
INGOT
GROUND & FLAT Si INGOT PER US STDS.
7244-1272
2300
3"
P
<111>
ANY
INGOT
GROUND, FLAT & MOUNTED INGOT
7244-6014-859
9400
4"
N/As
<100>
ANY
ANY
INGOT
ARSENIC DOPED; GROUND OR G&F INGOTS
BC1102~P1
2000
4"
N
<111>
.008
.018
INGOT
BY MEMC
7244-4682-126A
4000
4"
N/Ph
<111>
< .02
INGOT
AS-GROWN
DN03-10041
15300
4"
P
<100>
1
10
INGOT
0 FLAT
GROUND INGOT, WITH 0 FLATS
GC38892
112876
4"
P
<100>
1.3
3.7
INGOT
1 FLAT
GROUND W/ 1FLAT ONLY INGOT PER U.S. SEMI-STD.
GC38892-2
79214
4"
P
<100>
1.3
4.1
INGOT
GROUND WITH 2 U.S. FLATS PER U.S. SEMI-STDS
7352A
1814
4"
P
<100>
3.75
3.85
INGOT
NON-STD
GROUND W/2 FLATS & V-NOTCH ON PRIMARY FLAT
7352B
2602
4"
P
<100>
3.85
3.89
INGOT
NON-STD.
GROUND W/2 FLATS & V-NOTCH ON THE PRIMARY FLAT!
HC49138
8100
4"
P
<111>
.0015
.0035
INGOT
GROUND & FLAT INGOT PER U.S. SEMI-STDS
GC38892-4
153435
4"
P
<111>
3.42
8.7
INGOT
GROUND INGOT & 1 FLAT PER U.S. SEMI-STDS.
6387M
2987
5"
N/Sb
<100>
.044
.047
INGOT
Sb, GROUND & FLAT INGOT W/2 FLATS & V-NOTCH ON PRIMARY FLAT
7244-6013-427
6337
5"
N/As
<111>
< .007
INGOT
GROUND, FLAT & MOUNTED INGOT
7244-6013-633
20524
5"
N/As
<111>
.001
.01
INGOT
3 FLATS
ARSENIC DOPED, AS-GROWN INGOT W/3 FLATS
7244-6691-2B
7720
5"
P
<100>
.005
.02
INGOT
NOTCH
AS-GROWN, G&F, GROUND & MOUNTED W/NOTCH INGOT
6416M
4009
5"
P
<100>
.087
.092
INGOT
NON-STD
GROUND & FLAT INGOT W/V-NOTCH ON PRIMARY FLAT
7400-2
1702
5"
P
<100>
17
19.2
INGOT
G & F INGOT W/ OXYGEN 31.5-32.6 PPMA
3162085
10500
6"
ANY
ANY
ANY
ANY
INGOT
AS-GROWN INGOT
GC38892-5
206245
6"
N
<100>
.025
.074
INGOT
1 FLAT
GROUND & 1 FLAT PER U.S. SEMI-STDS.
WC109484
1500
6"
N/Ph
<110>
1
10
INGOT
1 FLAT
GROUND W/ U.S. PRIMARY FLAT ONLY, PER U.S. SEMI-STD. INGOT
Float Zone (FZ) Wafers
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Print Float Zone Listing
Qty on
Hand
8445
275
3"
N
<111>
6
12
280
300
PRIME
<111>OFF 3°±1° TOWARD THE NEXT <1-1-0>PLANE; SSP FZ Si WAFERS
4N0-10848
24
4"
N/Ph
<100>±1°
>5000
150
160
FZ
1
DSP FZ W/ SEMI-STD PRIMARY FLAT ONLY; LIFETIME>2 MILLISECONDS
4N0-10854
216
4"
N/Ph
<100>±1°
>5000
173
187
FZ
1
LAPPED, ETCHED & ER W/ SEMI-STD PRIMARY FLAT ONLY
DN1-10832
100
4"
N
<111>
1500
2500
382
418
FZ
SSP W/ SEMI-STD FLATS (MANUFACTURED BY WACKER)
WC67391F
45
5"
N/Ph
<111>
> 100
ANY
ANY
DSP
PHOS DOPED, FZ, US, Si WAFERS
EN03-SOI9554
17
5"
N
<100>±1°
3
10
620
630
PRIME
HANDLE WAFER: SSP FZ Si WAFERS; BURIED OXIDE: 450nm±25nm THERMAL OXIDE
FN05-10681
125
6"
N
<100>±1°
>10,000
350
400
DSP
1
FZ W/ STD PRIMARY FLAT ONLY, TTV <3�m
FP0-11183
10.78
6"
P
<100>
>5000
FZ
0
INGOT AS GROWN W/ NO FLATS OR NOTCH
7296~P1
25
6"
P
<100>
1000
2000
650
700
DSP
FZ
JK-82058
75
200mm
P
<100>
1500
2000
700
750
SSP
NOTCH
W/ ECHED BACKS & STD. NOTCH FZ
SOI (Silicon-On-Insulator) Wafer Listing
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SOI material is used widely in applications such as
telecommunication products and optical devices, dielectrically isolated integrated
circuits, solid state relays and micro-machined components for sensors and actuators.
NOVA offers an innovative and powerful through-wafer interconnect technology which can
allow device designers in both standard IC and MEMS device industries overcome packaging
problems associated with their designs. NOVA offers a fully customized engineered
substrate solution to minimize your fabrication headaches.
Typical Diameters range from 4" to 300mm. Please complete our
Request a Quote form with your specifications so
NOVA can quote your needs!
Epitaxial Wafer Listing
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Epitaxial silicon wafers are made through the precipitation of a
monocrystalline silicon coat. The substratum consists of a polished silicon wafer.
Epitaxial wafers are used for discrete applications and, because of their extraordinary
quality as semiconductors, for the manufacturing of the most progressive and highly
integrated semiconductor construction elements (ICs).
Typical Diameters range from 3" to 300mm. Please complete our
Request a Quote form with your specifications so
NOVA can quote your needs!
Solar Wafer Listing
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NOVA creates significant competitive advantages, in terms of cost
and quality, which are passed through the value chain of the entire silicon-based solar
cell manufacturing market. The resulting single crystal wafers are manufactured and sold
to meet the growing demands of the photovoltaic industry's major solar cell and module
manufacturers, helping to further satisfy rapidly expanding end-user demand currently
growing by 35 percent per year. Because NOVA's sources are designed for very high volume
materials handling, as opposed to traditional precision semiconductor manufacturing that
has been used to service the photovoltaic industry's silicon wafer needs in the past,
NOVA can allow far better utilization of raw silicon feedstock at significantly lower
cost within the supply chain.
Typical Diameters range from 3" to 125mm psuedo square to 300mm. Please contact NOVA's specialist or complete our
Request a Quote form with your specifications so
NOVA can quote your needs!