Silicon Wafer Materials

Silicon wafers are a matter of precision work. Silicon wafers form the basis of the most complex electronic components � from thyristors for high-voltage applications, through low-ohm circuit elements in automotive engineering and telecommunications, to large-scale integrated microprocessors and memory modules for information processing. Our longstanding cooperation and relationships with silicon wafer suppliers, which have grown over the years, have provided us with an in-depth knowledge of our customers and their requirements. Wherever possible, we strive to surpass our customers' expectations through specially tailored products and services. This strong customer orientation is reflected in a high level of appreciation and in our sound relationships with business partners. Please view our partial inventory listing or complete our Request a Quote form for NOVA to supply your needs!

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1"-2" Wafer Listing

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Add   Qty on       Resistivity Thickness    
Cart Item ID Hand Diameter Type Orientation Min. Max. Min. Max. Grade Flats
HS18810 128 1" N <100> 1 10 660 712 SSP Notch
    W/ 3,000 Å ±5% THERMAL OXIDE.
WC28242 50 2" N <100> 1 10 254 305 TEST  
     
8289 400 2" P <100> 1 10 254 305 TEST  
    SSP
HS4962210-1 26 2.5" N <100> 0.14 0.23 496 521    
    LAPPED & ER COINROLLED
HS4962210 1540 2.5" N <100> 0.14 0.23     INGOT  
    ~2.5" N/As GROUND INGOT
BC5197 1800 2.5" P <111> 0.025 0.028     INGOT  
    GROUND & FLATTED INGOT
 

3" Wafer Listing

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Add   Qty on       Resistivity Thickness    
Cart Item ID Hand Diameter Type Orientation Min. Max. Min. Max. Grade Flats
CA02-10016 (GaAs) 3 3" N/Te <100> 2.3E18   480 520 SSP* 1
    N(Te) cc: 2.3x10E 18, MOBILITY: 2370, EPD: 4x10E4, 500�m ±20�m SSP GaAs wafers w/ 1 FLAT & LOW TTV, <3�m.
WC68229-1 74 3" N <100>   < .005 356 406    
    SSP
HS18229 475 3" N/As <100>   < .005 355 406    
    SSP
WC37620-NV 350 3" N/Ph <100> 1 10 356 406 PRIME 1
    SSP
7395 3575 3" N/Ph <100> 1 10 356 406 PRIME 1
    W/ PRIMARY FLAT ONLY & 3,000 Ang.± 5% THERMAL OXIDE
WC37620 50 3" N/Ph <100> 1 10 356 406 PRIME 1
    SSP W/ PRIMARY FLAT ONLY
NPO7288 50 3" N <100> 5 10 330 432 TEST  
     
WC37573 25 3" N <100> 5 10 356 406 PRIME 2
    W/ 2 SEMI-STD FLATS
7244-1598 1200 3" N/As <100> ANY ANY     INGOT 1
    MOUNTED ARSENIC Si INGOT
BC4030 148 3" N <111>   < .013 550 625 ASCUT  
     
BC971942~P1 375 3" N/Sb <111> 0.005 0.02 305 457   2
    SSP
7244-2718-923 30550 3" N/Sb <111> 0.005 0.05     INGOT  
    ANTIMONY(Sb), AS-GROWN,GROUND & FLAT, GROUND INGOT
BC39650 25 3" N/Sb <111> 0.008 0.016 356 406 PRIME  
    SSP WITH TTV <2�m
7244-2718-935B 14700 3" N/Sb <111> 0.01 0.05     INGOT  
    ANTIMONY DOPED, AS-GROWN &/OR GROUND&FLATTED INGOT
BC3032 73 3" N <111> .05 0.10 300 406 ASCUT  
    COINROLL
7244-1602 4500 3" N/ARS <111> 1.17 2.11     INGOT  
    ARSENIC DOPED, AS-GROWN INGOT
8445 275 3" N <111> 6 12 280 300 PRIME  
    <111>OFF 3°±1° TOWARD THE NEXT <1-1-0>PLANE; SSP FZ Si WAFERS
BC88996 173 3" N/N+ <111> > .01   356 406 EPI  
    Sb DOPED, (111) OFF 3-4° WITH EPI LAYER= N (PHOS) 7.5-10 OHM-CM, 20-25�m THICK
HC40561 28 3" N/Ph ANY ANY ANY ANY ANY ASCUT  
    PHOS DOPED, AS-CUT EDGEROUND Ge WAFERS
7244-6012-91A 816 3" P <100>   < .005 429 436 ASCUT 2
    W/ 2 SEMI-STD FLATS
7244-69 3800 3" P <100> 0.01 0.05     INGOT 2
    AS-GROWN&/OR GRD & 2 FLAT INGOT
CP17-10041 16300 3" P <100> 1 10     INGOT  
    GROUND INGOT, WITH 0 FLATS OR 2 FLATS PER SEMI-STDS
WC27806 350 3" P <100> 1 20 356 406 TEST  
    SSP
STK8162 300 3" P <100> 10 30 305 355 PRIME 1 FLAT
    W/ PRIMARY FLAT ONLY
CP12-10712-03 4 3" P <100> 10 30 305 355   1
    SSP W/ PRIMARY FLT & <100 PART @.3�m; NO SCRATCHES, PITS
CP01-10973 25 3" P <100> .001 .005 355 405 PRIME 2
    SSP W/ 500Å ± 10% Si NITRIDE
CP03-10685 25 3" P <100> >1 (Falling 2-18) 600 650   2
    SSP W/ 2 SEMI-STD FLATS
BC17967 7200 3" P <111> .014 .02     INGOT  
    GROUND & FLAT Si INGOT PER US STDS.
7244-1272 2300 3" P <111> ANY       INGOT  
    GROUND, FLAT & MOUNTED INGOT
 

4" Wafer Listing

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Add   Qty on       Resistivity Thickness    
Cart Item ID Hand Diameter Type Orientation Min. Max. Min. Max. Grade Flats
HC44002 (Ge) 50 4" N ANY 5 40 762 813 ASCUT  
    Ge WAFERS
DN03-10624 100 4" N <100>   < .005 500 550 PRIME 2
    SSP W/ 2 SS FLATS
STK8414 523 4" N/Ph <100> 1 10 500 550 PRIME 1 FLAT
    W/ US PRIMARY FLAT ONLY (SOME W/ 2 FLATS) 
4N0-10848 24 4" N/Ph <100>±1° >5000   150 160 FZ 1
    DSP FZ W/ SEMI-STD PRIMARY FLAT ONLY; LIFETIME>2 MILLISECONDS
4N0-10854 216 4" N/Ph <100>±1° >5000   173 187 FZ 1
    LAPPED, ETCHED & ER W/ SEMI-STD PRIMARY FLAT ONLY
7244-6014-859 9400 4" N/As <100> ANY ANY     INGOT  
    ARSENIC DOPED; GROUND OR G&F INGOTS
BC1102~P1 2000 4" N <111> .008 .018     INGOT  
    BY MEMC
7244-4682-126A 4000 4" N/Ph <111>   < .02     INGOT  
    AS-GROWN
DN1-10832 100 4" N <111> 1500 2500 382 418 FZ  
    SSP W/ SEMI-STD FLATS (MANUFACTURED BY WACKER)
HC44004 (Ge) 23 4" N ANY 5 40 1016 1067 ASCUT  
    Ge WAFERS *
HC44003 (Ge) 50 4" N ANY 5 40 762 813 ASCUT  
    Ge WAFERS*
HC44001 (Ge) 24 4" N ANY 5 50 635 686 ASCUT  
    Ge WAFERS*
HC22001 23 4" N/N+ ANY .0015 .003 ANY ANY EPI  
    WITH EPI LAYERS = ANY RESISTIVITY & THICKNESS
DN10-40155 23 4" N/N+ <100>            
    .007-.02/2.53=2.97 OHM-CM; 375-425/15.437-17.062�m THICK SSP EPI WAFERS W/ OXIDE BACKS
HS39626 100 4" P <100> .001 .005 500 550 PRIME  
    SSP W/ STD FLATS 
HS39626-OX 50 4" P <100> .001 .005 500 550 PRIME  
    SSP W/ STD FLATS & THERMAL OXIDE
DP03-11187 75 4" P <100> .2 .4 500 550 PRIME 2
    SSP W/ 2 SEMI-STD FLATS
STK8414-2 113 4" P <100> 1 10 500 550 PRIME 1 FLAT
    W/ U.S. PRIMARY FLAT ONLY & LM
STK9671 86 4" P <100> 1 10 500 550 PRIME 1 FLAT
    SSP W/ SEMI-STD FLATS; LPD'S <20@.3�m 
DN03-10041 15300 4" P <100> 1 10     INGOT 0 FLAT
    GROUND INGOT, WITH 0 FLATS
SOI11000 29 4" P <100> 1 10     SOI  
    HANDLE: 300±20�m THICK DSP W/OUT OXIDE; BOX: 1.5-2�m THERMAL OXIDE; DEVICE: 35-40�m
BC79114 450 4" P <100> 1 50 475 550 DSP  
    W/ SEMI-STD FLATS 
GC38892 112876 4" P <100> 1.3 3.7     INGOT 1 FLAT
    GROUND W/ 1FLAT ONLY INGOT PER U.S. SEMI-STD.
GC38892-2 79214 4" P <100> 1.3 4.1     INGOT  
    GROUND WITH 2 U.S. FLATS PER U.S. SEMI-STDS
GC39152 33 4" P <100> 1.3 3.7 500 550 PRIME 1 FLAT
    W/ U.S. PRIMARY FLAT ONLY & PARTICLES<10@.3�m
GC29152-1 535 4" P <100> 1.3 4.55 610 630 ASCUT
    ASCUT, ER Si WAFERS W/ 2 SEMI-STD. FLATS
BC27819 293 4" P <100> 20 40 500 550 PRIME  2
    W/ 2 FLATS PER SEMI-STD
7352A 1814 4" P <100> 3.75 3.85     INGOT NON-STD
    GROUND W/2 FLATS & V-NOTCH ON PRIMARY FLAT
7352B 2602 4" P <100> 3.85 3.89     INGOT NON-STD.
    GROUND W/2 FLATS & V-NOTCH ON THE PRIMARY FLAT!
7384~P1 50 4" P <100> 5 25 500 550 PRIME  
    SSP W/ 10K THERMAL OXIDE, 200Å Ti, & 1500Å Pt
7358 63 4" P <100> 5 25 500 550 PRIME 2
    W/ 2 SEMI-STD FLATS
7375 1050 4" P <100> 1 25 475 575 TEST  2
    W/ 2 FLATS; LPD�S <30@ .5
HC49138 8100 4" P <111> .0015 .0035     INGOT  
    GROUND & FLAT INGOT PER U.S. SEMI-STDS
7425 50 4" P+ <111> 0.008 0.02 500 540 PRIME  
    OFF 2.5-3.5°, WITH OXIDE BACKSEAL & 1 SEMI.STD. FLAT, FS
7384~P3 25 4" P <111> 1 10 500 550 TEST 1
    OREN. OFF 4° W/ 1 SEMI-STD FLAT
GC38892-4 153435 4" P <111> 3.42 8.7     INGOT  
    GROUND INGOT & 1 FLAT PER U.S. SEMI-STDS.
 

5" Wafer Listing

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Add   Qty on       Resistivity Thickness    
Cart Item ID Hand Diameter Type Orientation Min. Max. Min. Max. Grade Flats
GC31036 481 5" ANY ANY ANY ANY ANY ANY LAPPED  
    LAPPED & EDGE-ROUNDED COINROLL Si WAFERS (MOST ARE FALLING THIN--IE: ~15 MILS)
6387M 2987 5" N/Sb <100> .044 .047     INGOT  
    Sb, GROUND & FLAT INGOT W/2 FLATS & V-NOTCH ON PRIMARY FLAT
7479-1 409 5" N <100> 1 10 380 405 ETCH  
    ETCH, EDGE-ROUNDED Si WAFERS COIN-ROLLED
EN03-9778 28 5" N/Ph <100> 10 50 600 650 PRIME NOTCH
    W/ PRIMARY NOTCH ONLY PER SEMI-STDS 
EN03-10346 75 5" N/Ph <100>±1° 2.5 5.5 620 625 PRIME 1
    SSP W/ PRIMARY FLAT ONLY (ON <110>±1°, 42..
EN03-10345 100 5" N/Ph <100>±1° 3 10 620 625 PRIME CZ 1
    SSP W/ PRIMARY FLAT ONLY (ON <110>±1°, 42�
73871-2 160 5" N <100> ANY ANY 630 730 LAPPED NON-STD
    LAPPED & ER W/2 FLATS, PRIMARY FLAT HAS V-NOTCH, COIN-ROLLED
7244-6013-427 6337 5" N/As <111>   < .007     INGOT  
    GROUND, FLAT & MOUNTED INGOT
7244-6013-633 20524 5" N/As <111> .001 .01     INGOT 3 FLATS
    ARSENIC DOPED, AS-GROWN INGOT W/3 FLATS
WC67391F 45 5" N/Ph <111> > 100   ANY ANY DSP  
    PHOS DOPED, FZ, US, Si WAFERS
EN03-SOI9554 17 5" N <100>±1° 3 10 620 630 PRIME  
    HANDLE WAFER: SSP FZ Si WAFERS; BURIED OXIDE: 450nm±25nm THERMAL OXIDE
BC87412 175 5" P <100> 0.005 0.015 600 650 PRIME  
    PER SEMI-STDS 2 STD FLATS 
7244-6691-2B 7720 5" P <100> .005 .02     INGOT NOTCH
    AS-GROWN, G&F, GROUND & MOUNTED W/NOTCH INGOT
GC211001-4 163 5" P <100> .01 .02 600 650 PRIME 1 FLAT
    W/PRIMARY FLAT ONLY AND PARTICLES <20@ .5 <20 @ 0.5>
6416M 4009 5" P <100> .087 .092     INGOT NON-STD
    GROUND & FLAT INGOT W/V-NOTCH ON PRIMARY FLAT
7479-3 108 5" P <100> 1 10 380 405 ETCH  
    EDGE-ROUNDED Si WAFERS COIN-ROLLED
HS28778 25 5" P <100> ANY ANY 600 650 PRIME 1 FLAT
    W/ LASERMARK
73871 44 5" P <100> > 100   630 730 LAPPED NON-STD
    EDGE-ROUNDED Si WAFERS W/2 FLATS, PRIMARY FLAT HAS V-NOTCH
7409-1 25 5" P <100> 11 50 600 650 PRIME NOTCH
    <100>on ±.5°, PRIME DSP Si WAFERS WITH NOTCH ON (110) PLANE & LM ON FRONT & TTV < 10� MAX
7400-2 1702 5" P <100> 17 19.2     INGOT  
    G & F INGOT W/ OXYGEN 31.5-32.6 PPMA
WC98615 25 5" P <100> 20 40 600 650 PRIME  2
    FS BY MEMC
7387 89 5" P <100> 42 52.1 725 750 ASCUT NON-STD
    W/2 FLATS, PRIMARY FLAT HAS V-NOTCH
7285-2 125 5" P <111> .01 .02 600 650 PRIME  
    W/ ETCHED BACKS & PRIMARY FLAT ONLY 
GC211001-7 64 5" P <111> .01 .02 600 650 RECLAIM  
    UNSEALED COIN-ROLLED
72424~P1 50 5" P <111> 3 5 600 640 PRIME  
    <111>OFF 3-5°, W/ EG BACKS & 1 FLAT
 

6" Wafer Listing

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Add   Qty on       Resistivity Thickness    
Cart Item ID Hand Diameter Type Orientation Min. Max. Min. Max. Grade Flats
RC2-10870 24 6"             RECLAIM  
    SERVICE TO RECLAIM/RECYCLE 6" W/NOTCH TO >600�m THICK; LPD�S<30@ .5�m
FA01-9900 4 6" ANY ANY ANY ANY 750   PYREX  
    6" X .75mm THICK PYREX WAFERS WITH EDGES SEAMED.
3162085 10500 6" ANY ANY ANY ANY     INGOT  
    AS-GROWN INGOT
FN0600-700 76 6" N/Sb <100> .008 .02 600 700 ETCHED 1
    W/ PRIMARY FLAT
GC38892-5 206245 6" N <100> .025 .074     INGOT 1 FLAT
    GROUND & 1 FLAT PER U.S. SEMI-STDS.
HS29284 722 6" N <100> 1 100 600 700 TEST 1 FLAT
    (NOTE: 100sl W/ 10,000 ű5% THERMAL OXIDE)
FN03-11006 96 6" N <100> 1 30 >675   PRIME NOTCH
    LAPPED, ER W/ SEMI-STD V-NOTCH
FN05-10681 125 6" N <100>±1° >10,000   350 400 DSP 1
    FZ W/ STD PRIMARY FLAT ONLY, TTV <3�m
FN02-61465 25 6" N <100> 10 20 490 526 SSP  
    W/ STD. FLAT
FN05-11081-2 75 6" N/Ph <100> 4.5 9 622.3 647.7 DSP  
    W/ STD. PRIMARY FLAT ONLY, TTV <3�m, B/W <20�m
FN05-11081 75 6" N/Ph <100> 4.5 9 672.3 697.7 DSP  
    W/ STD. PRIMARY FLAT ONLY, TTV <3�m, B/W <20�m
FN06-10733 26 6" N <100> 5 75 610 690 SSP 1
    W/ PRIMARY FLAT ONLY
WC109484 1500 6" N/Ph <110> 1 10     INGOT 1 FLAT
    GROUND W/ U.S. PRIMARY FLAT ONLY, PER U.S. SEMI-STD. INGOT
FP0-11183 10.78 6" P <100> >5000       FZ 0
    INGOT AS GROWN W/ NO FLATS OR NOTCH
FP02-61160 25 6" P <100> .0045 .007 490 526 SSP  
    W/ STD FLAT
GC49266 525 6" P <100> .005 .08 1175 1225 DSP NOTCH
    PRIME DSP Si WAFERS W/V-NOTCH, TTV <3�m & ><10 PARTICLES @ 0.5�m><3�m
WC99755 50 6" P <100> > 1   710 740 SSP 1 FLAT
     
HS19045 175 6" P <100> 1 30 600 700 SSP V-NOTCH
    PRIMARY V-NOTCH W/ 3K THERMAL OXIDE
FP02-10962 25 6" P <100> 1 30 650 700 PRIME NOTCH
    SSP W/ STD. NOTCH ONLY & TTV <1�m, B/W <30�m PER US SEMI-STDS.
HS18004 18 6" P <100> 1 50 600 650 PRIME 1 FLAT
    W/ .35�m STEPPED MASKING, RESIST STRIP, DRY ETCH UP TO 1� TRENCH, 1500A TiN ON TOP
HS19222 380 6" P <100> 1 100 600 700 VIRGIN TEST 1 FLAT
    W/ PRIMARY U.S. SEMI-STD FLAT, TTV <40�m, TIR <15�m, 
7448 250 6" P <100> >1   645 705 TEST  
    W/ 2K Å THERMAL OXIDE
HS38780 125 6" P <100> 1 50 650 700 PRIME 1 FLAT
    SSP W/ PRIMARY FLAT ONLY & 10,000 ANG. THERMAL OXIDE ±5%
BC38330 3359 6" P <100> ANY ANY >550   RECLAIM  
    SSP
7296~P1 25 6" P <100> 1000 2000 650 700 DSP  
    FZ
AV38078 7 6" P <100> > 3500   765 1260 EDGE-ROUNDED NOTCH
     
HS89121 14 6" ANY <100> ANY ANY 1150 1350 PRIME NOTCH
    SSP W/ STD. NOTCH, TTV </=3�m
WC78987 250 6" P <100> 1 50 650 700 SSP 1 FLAT
    W/ PRIMARY FLAT ONLY
FP05-10481 9256 6" P <100> ANY ANY 600 700 TEST 1
    SSP W/ 1 FLAT ONLY
9834 548 6" P <110> 10 20 610 640 PRIME 1
    LASERMARK
FP04-10107 1335 6" P <100> 0 100 600 700   NOTCH
    SSP W/ NOTCH & 3,000ű5% THERMAL OXIDE
FP16-18828 719 6" ANY <100> ANY ANY 600 700   NOTCH
    SSP W/ NOTCH ONLY & TTV </= 15�m
7467 94 6" P <100> 5 30 625 725 TEST 1
    W/ 1 SEMI STD PRIMARY FLAT; TTV <10
HS18854 150 6" P <100> 1 30 650 700 PRIME NOTCH
    TTV </= 3�m
 

200mm Wafer Listing

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Add   Qty on       Resistivity Thickness    
Cart Item ID Hand Diameter Type Orientation Min. Max. Min. Max. Grade Flats
HS18590 175 200mm ANY ANY ANY ANY 760 890 SSP  
     
HS49355 24 200mm N <100> 1 10 700 750 PRIME NOTCH
    W/ STD. NOTCH, OXIDE POLY BACK W/ LM ON BACKSIDE
JK-81940 48 200mm N/N+ <100>         EPI  
    .0015-.0035/.877-.979 OHM-CM, 710-740/6.4-7.56�m THICK SSP EPI W/ POLY, OX BKS
JK-81699 50 200mm N/P+ <100>         EPI  
    .01-.02/8-10 OHM-CM, 710-740/13-15�m THICK SSP EPI W/ OX BKS &LM
3012007A 27 200mm ANY ANY ANY ANY ANY ANY RECLAIMABLES  
     
OP00-9809 5050 200mm P <100>   <.02 675 775 TEST  NOTCH
    SSP W/ V-NOTCH & ETCHED BACKSIDE
5196 15 200mm P <100> .005 .02 ANY ANY DSP  NOTCH
    14-DSP, 1-AS CUT UNSEALED
WC10103~P1 15 200mm P <100> .5 100 705 740 PRIME  
     
WC117207~P1 45 200mm P <100> .5 50 >712   LAPPED  
    COINROLL
7574-2 200 200mm P <100> .700 1.1 710 740 PRIME NOTCH
    SSP W/ SEMI-STD NOTCH & POLYBACKS
HP01-T200SSP 926 200mm P <100> 0 100 650 775 SSP NOTCH
    W/ STD. NOTCH & LPD�S <100@.3
7574-1 200 200mm P <100> 1 100 690 760 TEST  
    W/ NOTCH & PLOY BACKS .8�m±10%
HP01-T200R 18765 200mm P <100> 1 100 700 750 RECLAIMABLE  
    SSP
OP00-9833 9483 200mm P <100> 1 100 695 750 TEST NOTCH
     
WC98987 94 200mm P <100> 10 25 700 750 SSP NOTCH
    W/ STD. NOTCH & OPTIONAL LM
JK-82058 75 200mm P <100> 1500 2000 700 750 SSP NOTCH
    W/ ECHED BACKS & STD. NOTCH FZ
JK-82019 25 200mm P <100> 2 4 710 740 PRIME NOTCH
    SSP W/ ETCH BACKS & LM OPPOSITE OF NOTCH
9911 250 200mm P <100> 9 18 712 762 DSP  NOTCH
    W/ LASERMARK
GC19195 200 200mm P or N <100> >1   650 750 VIRGIN TEST NOTCH
    SSP
OP03-11146 75 200mm P <100> >25   >650   TEST NOTCH
    SSP W/ PART <30@ .3�m
BC9137 75 200mm P <100> ANY ANY ANY ANY PATTERN  
    PATTERNED SIMOX WAFERS
JK-81088 600 200mm P/P+ <100>         EPI  
    .005-.01/9.9-12.6815 OHM-CM; 705-745/3.8-4.2�m THICK SSP PRIME EPI W/ POLY OX BKS, LM
JK-81985 100 200mm P/P+ <100>         EPI  
    .005-.01-9.9-12.6815 OHM-CM; 705-745/2.85-3.15�m THICK, SSP EPI W/ POLY OX BKS & LM
 

300mm Wafer Listing

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Add   Qty on       Resistivity Thickness    
Cart Item ID Hand Diameter Type Orientation Min. Max. Min. Max. Grade Flats
PP01-9818 125 300mm P <100>±1° 1 100 750 800 DSP  
    Litho. Grade w/ std. notch, LM, Warp <50�m, SFQR><.18�m (95% PUA; 26x33mm), LPD><50@.16�m
NP-T300R 28 300mm P <100> 1 100 750 800 DSP  
    W/ FILMS OR PATTERNS
NP01-T300S 13 300mm P <100> 1 100 750 800 RECLAIMABLE  
    DSP
STK9754 25 300mm P <100> 1 100 750 800 DSP  
    Prm Grade W/ Site Flatness SFQR
 

Ingot Listing

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Add   Qty on       Resistivity Thickness    
Cart Item ID Hand Diameter Type Orientation Min. Max. Min. Max. Grade Flats
HS4962210 1540 2.5" N <100> 0.14 0.23     INGOT  
    ~2.5" N/As GROUND INGOT
BC5197 1800 2.5" P <111> 0.025 0.028     INGOT  
    GROUND & FLATTED INGOT
7244-1598 1200 3" N/As <100> ANY ANY     INGOT 1
    MOUNTED ARSENIC Si INGOT
7244-2718-923 30550 3" N/Sb <111> 0.005 0.05     INGOT  
    ANTIMONY(Sb), AS-GROWN,GROUND & FLAT, GROUND INGOT
7244-2718-935B 14700 3" N/Sb <111> 0.01 0.05     INGOT  
    ANTIMONY DOPED, AS-GROWN &/OR GROUND&FLATTED INGOT
7244-1602 4500 3" N/ARS <111> 1.17 2.11     INGOT  
    ARSENIC DOPED, AS-GROWN INGOT
7244-69 3800 3" P <100> 0.01 0.05     INGOT 2
    AS-GROWN&/OR GRD & 2 FLAT INGOT
CP17-10041 16300 3" P <100> 1 10     INGOT  
    GROUND INGOT, WITH 0 FLATS OR 2 FLATS PER SEMI-STDS
BC17967 7200 3" P <111> .014 .02     INGOT  
    GROUND & FLAT Si INGOT PER US STDS.
7244-1272 2300 3" P <111> ANY       INGOT  
    GROUND, FLAT & MOUNTED INGOT
7244-6014-859 9400 4" N/As <100> ANY ANY     INGOT  
    ARSENIC DOPED; GROUND OR G&F INGOTS
BC1102~P1 2000 4" N <111> .008 .018     INGOT  
    BY MEMC
7244-4682-126A 4000 4" N/Ph <111>   < .02     INGOT  
    AS-GROWN
DN03-10041 15300 4" P <100> 1 10     INGOT 0 FLAT
    GROUND INGOT, WITH 0 FLATS
GC38892 112876 4" P <100> 1.3 3.7     INGOT 1 FLAT
    GROUND W/ 1FLAT ONLY INGOT PER U.S. SEMI-STD.
GC38892-2 79214 4" P <100> 1.3 4.1     INGOT  
    GROUND WITH 2 U.S. FLATS PER U.S. SEMI-STDS
7352A 1814 4" P <100> 3.75 3.85     INGOT NON-STD
    GROUND W/2 FLATS & V-NOTCH ON PRIMARY FLAT
7352B 2602 4" P <100> 3.85 3.89     INGOT NON-STD.
    GROUND W/2 FLATS & V-NOTCH ON THE PRIMARY FLAT!
HC49138 8100 4" P <111> .0015 .0035     INGOT  
    GROUND & FLAT INGOT PER U.S. SEMI-STDS
GC38892-4 153435 4" P <111> 3.42 8.7     INGOT  
    GROUND INGOT & 1 FLAT PER U.S. SEMI-STDS.
6387M 2987 5" N/Sb <100> .044 .047     INGOT  
    Sb, GROUND & FLAT INGOT W/2 FLATS & V-NOTCH ON PRIMARY FLAT
7244-6013-427 6337 5" N/As <111>   < .007     INGOT  
    GROUND, FLAT & MOUNTED INGOT
7244-6013-633 20524 5" N/As <111> .001 .01     INGOT 3 FLATS
    ARSENIC DOPED, AS-GROWN INGOT W/3 FLATS
7244-6691-2B 7720 5" P <100> .005 .02     INGOT NOTCH
    AS-GROWN, G&F, GROUND & MOUNTED W/NOTCH INGOT
6416M 4009 5" P <100> .087 .092     INGOT NON-STD
    GROUND & FLAT INGOT W/V-NOTCH ON PRIMARY FLAT
7400-2 1702 5" P <100> 17 19.2     INGOT  
    G & F INGOT W/ OXYGEN 31.5-32.6 PPMA
3162085 10500 6" ANY ANY ANY ANY     INGOT  
    AS-GROWN INGOT
GC38892-5 206245 6" N <100> .025 .074     INGOT 1 FLAT
    GROUND & 1 FLAT PER U.S. SEMI-STDS.
WC109484 1500 6" N/Ph <110> 1 10     INGOT 1 FLAT
    GROUND W/ U.S. PRIMARY FLAT ONLY, PER U.S. SEMI-STD. INGOT
 

Float Zone (FZ) Wafers

Top of Page Quote Cart Print Float Zone Listing
Add   Qty on       Resistivity Thickness    
Cart Item ID Hand Diameter Type Orientation Min. Max. Min. Max. Grade Flats
8445 275 3" N <111> 6 12 280 300 PRIME  
    <111>OFF 3°±1° TOWARD THE NEXT <1-1-0>PLANE; SSP FZ Si WAFERS
4N0-10848 24 4" N/Ph <100>±1° >5000   150 160 FZ 1
    DSP FZ W/ SEMI-STD PRIMARY FLAT ONLY; LIFETIME>2 MILLISECONDS
4N0-10854 216 4" N/Ph <100>±1° >5000   173 187 FZ 1
    LAPPED, ETCHED & ER W/ SEMI-STD PRIMARY FLAT ONLY
DN1-10832 100 4" N <111> 1500 2500 382 418 FZ  
    SSP W/ SEMI-STD FLATS (MANUFACTURED BY WACKER)
WC67391F 45 5" N/Ph <111> > 100   ANY ANY DSP  
    PHOS DOPED, FZ, US, Si WAFERS
EN03-SOI9554 17 5" N <100>±1° 3 10 620 630 PRIME  
    HANDLE WAFER: SSP FZ Si WAFERS; BURIED OXIDE: 450nm±25nm THERMAL OXIDE
FN05-10681 125 6" N <100>±1° >10,000   350 400 DSP 1
    FZ W/ STD PRIMARY FLAT ONLY, TTV <3�m
FP0-11183 10.78 6" P <100> >5000       FZ 0
    INGOT AS GROWN W/ NO FLATS OR NOTCH
7296~P1 25 6" P <100> 1000 2000 650 700 DSP  
    FZ
JK-82058 75 200mm P <100> 1500 2000 700 750 SSP NOTCH
    W/ ECHED BACKS & STD. NOTCH FZ
 
 

SOI (Silicon-On-Insulator) Wafer Listing

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SOI material is used widely in applications such as telecommunication products and optical devices, dielectrically isolated integrated circuits, solid state relays and micro-machined components for sensors and actuators.

NOVA offers an innovative and powerful through-wafer interconnect technology which can allow device designers in both standard IC and MEMS device industries overcome packaging problems associated with their designs. NOVA offers a fully customized engineered substrate solution to minimize your fabrication headaches.

Typical Diameters range from 4" to 300mm. Please complete our Request a Quote form with your specifications so NOVA can quote your needs!
 
 

Epitaxial Wafer Listing

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Epitaxial silicon wafers are made through the precipitation of a monocrystalline silicon coat. The substratum consists of a polished silicon wafer.

Epitaxial wafers are used for discrete applications and, because of their extraordinary quality as semiconductors, for the manufacturing of the most progressive and highly integrated semiconductor construction elements (ICs).

Typical Diameters range from 3" to 300mm. Please complete our Request a Quote form with your specifications so NOVA can quote your needs!
 
 

Solar Wafer Listing

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NOVA creates significant competitive advantages, in terms of cost and quality, which are passed through the value chain of the entire silicon-based solar cell manufacturing market. The resulting single crystal wafers are manufactured and sold to meet the growing demands of the photovoltaic industry's major solar cell and module manufacturers, helping to further satisfy rapidly expanding end-user demand currently growing by 35 percent per year. Because NOVA's sources are designed for very high volume materials handling, as opposed to traditional precision semiconductor manufacturing that has been used to service the photovoltaic industry's silicon wafer needs in the past, NOVA can allow far better utilization of raw silicon feedstock at significantly lower cost within the supply chain.

Typical Diameters range from 3" to 125mm psuedo square to 300mm. Please contact NOVA's specialist or complete our Request a Quote form with your specifications so NOVA can quote your needs!